AlAs/AlGaAs X-valley quantum-well normal-incidence infrared detectors on Si substrates

Y. Zhang, N. Baruch, W. I. Wang

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Abstract

AlAs/AlGaAs X-valley multiquantum-well detectors grown on Si substrate are reported. Normal-incidence infrared-absorption measurements were performed on [113]- and [115]-oriented samples grown on Si substrate at a wavelength range of 5-20 μm. An absorption peak was observed in the [113]-oriented quantum wells with an infrared-absorption coefficient of α=1400 cm-1 (quantum efficiency η=13%); similar results were attained with the [115] sample. The experimental results indicate the potential of these novel structures as normal-incidence infrared photodetectors. The results point to the possibility of integrating photodetectors and signal processing circuits on the same Si substrate.

Original languageEnglish (US)
Pages (from-to)3690-3691
Number of pages2
JournalJournal of Applied Physics
Volume75
Issue number7
DOIs
StatePublished - Dec 1 1994

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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