Advantages of semiconductor device simulator combining electromagnetic and electron transport models

S. M Sohel Imtiaz, Samir M. El-Ghazaly, Robert O. Grondin

    Research output: Contribution to journalArticle

    Abstract

    Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large-signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi-static model in the device simulator. In this paper, the advantages of a semiconductor device simulator combining an electromagnetic and an electron transport models are presented. This study is based on a semiconductor device simulator that couples a semiconductor model to the 3D time-domain solution of Maxwell's equations. The electromagnetic wave propagation effects on the millimeter-wave FETs are thoroughly analyzed. The use of the electromagnetic model over the conventional quasi-static model provides the actual device response at high frequencies. It also shows the nonlinear energy build-up along the device width whereas the quasi-static model provides a linear increase of energy. The combined model is capable of predicting the device nonlinearity and harmonic distortion of amplifier circuits at large signal.

    Original languageEnglish (US)
    Pages (from-to)495-500
    Number of pages6
    JournalVLSI Design
    Volume8
    Issue number1-4
    StatePublished - Dec 1 1998

    Keywords

    • Device simulation
    • FDTD
    • Full-wave simulators
    • Hydrodynamic models

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Computer Graphics and Computer-Aided Design
    • Electrical and Electronic Engineering

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  • Cite this

    Imtiaz, S. M. S., El-Ghazaly, S. M., & Grondin, R. O. (1998). Advantages of semiconductor device simulator combining electromagnetic and electron transport models. VLSI Design, 8(1-4), 495-500.