Accurate impact ionization model which accounts for hot and cold carrier populations

T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Conventional macroscopic impact ionization models which use the average carrier energy as a main parameter can not accurately describe the phenomenon in modern miniaturized devices. Here, we present a model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of metal-oxide-semiconductor transistors. The parameters are determined by three-even moments obtained from a solution of a six-moments transport model. Together with a nonparabolic description of the density of states, accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions.

Original languageEnglish (US)
Pages (from-to)613-615
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number4
DOIs
StatePublished - Jan 28 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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