Abstract
Conventional macroscopic impact ionization models which use the average carrier energy as a main parameter can not accurately describe the phenomenon in modern miniaturized devices. Here, we present a model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of metal-oxide-semiconductor transistors. The parameters are determined by three-even moments obtained from a solution of a six-moments transport model. Together with a nonparabolic description of the density of states, accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions.
Original language | English (US) |
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Pages (from-to) | 613-615 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 4 |
DOIs | |
State | Published - Jan 28 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)