Accurate analysis of shallowly implanted solar wind ions by SIMS backside depth profiling

Veronika S. Heber, Kevin D. McKeegan, Donald S. Burnett, Jean Duprat, Yunbin Guan, Amy Jurewicz, Chad T. Olinger, Stephen P. Smith

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A method to quantitatively determine the fluences of shallowly-implanted solar wind ions returned to Earth by the Genesis Discovery mission is described. Through backside depth-profiling, we recover nearly complete depth profiles of implanted solar wind for several nonvolatile elements, including Mg, Al, Ca, Cr, and, to a lesser extent, Na, in silicon targets that collected bulk solar wind and solar wind from specific velocity regimes. We also determine the fluences of the volatile elements C, N, and O in silicon targets that collected bulk solar wind. By the use of appropriately calibrated ion implanted standards, fluences as low as 2×1010 atoms cm-2 can be determined with precision and accuracy typically in the few percent range. Specific approaches to sample preparation, sputtering artifacts during depth profiling by secondary ion mass spectrometry, and quantification including the production of ion implant standards are discussed.

Original languageEnglish (US)
Pages (from-to)61-73
Number of pages13
JournalChemical Geology
Volume390
DOIs
StatePublished - Dec 8 2014

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Keywords

  • Backside depth profiling
  • Genesis mission
  • Ion implantation
  • Secondary ion mass spectrometry
  • Solar wind analysis

ASJC Scopus subject areas

  • Geology
  • Geochemistry and Petrology

Cite this

Heber, V. S., McKeegan, K. D., Burnett, D. S., Duprat, J., Guan, Y., Jurewicz, A., Olinger, C. T., & Smith, S. P. (2014). Accurate analysis of shallowly implanted solar wind ions by SIMS backside depth profiling. Chemical Geology, 390, 61-73. https://doi.org/10.1016/j.chemgeo.2014.10.003