A V-Band GaN Power Amplifier with 34.9% PAE and 35.1 dBm Output Power

Pouria Pazhouhesh, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a high efficiency, highest reported output power GaN-based power amplifier targeting the V-band frequency range from 65 to 71 GHz. Implemented in HRL's 40 nm GaN T3 MMIC process and simulated in AWR, the presented power amplifier achieves a simulated peak power added efficiency (PAE) of 34.9% at 66 GHz. The PA is composed of three stages, and the output stage uses a 4:1 Wilkinson power combiner. The PA's maximum linear power gain is 13.3 dB at 68 GHz for an input power of 13 dBm. The maximum output power at 1dB compression point is 35.1 dBm at 68 GHz, associated with an input power of 23 dBm. The chip size is 2.7×4.9mm2, thus demonstrating a high power density of 245 mW/mm2 in simulation.

Original languageEnglish (US)
Title of host publicationProceedings of the 2021 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems
Subtitle of host publicationMaking Waves in Texas, WMCS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665403092
DOIs
StatePublished - May 18 2021
Externally publishedYes
Event2021 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2021 - Virtual, Online
Duration: May 18 2021May 20 2021

Publication series

NameProceedings of the 2021 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems: Making Waves in Texas, WMCS 2021

Conference

Conference2021 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2021
CityVirtual, Online
Period5/18/215/20/21

Keywords

  • GaN
  • High Output Power
  • High PAE
  • Power Amplifier
  • V-band
  • Wilkinson Power Combiner

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Instrumentation

Fingerprint

Dive into the research topics of 'A V-Band GaN Power Amplifier with 34.9% PAE and 35.1 dBm Output Power'. Together they form a unique fingerprint.

Cite this