A static, physical VDMOS model based on the charge-sheet model

James J. Victory, Julian J. Sanchez, Thomas A. Demassa, Bruno Welfert

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A physically based VDMOS model Is derived based on the charge-sheet analysis. This is the first time a charge-sheet approach has been successfully used to model VDMOS. The continuous nature of the charge-sheet model results in a continuous I-V model for VDMOS from subthreshold to saturation. The generalized form of the charge-sheet model enables the physical modeling of the nonuniform doping through the MOS channel region of the VDMOS. A physical model of the drift region is combined with the channel model to give a complete physical system of equations which is solved numerically. The model includes detailed calculations of the drift region parameters including the variation of the internal depletion widths with external bias. The physical, continuous behavior of the model provides easy extraction of small signal parameters and interelectrode capacitances. PISCES simulations are used extensively during the development to provide physical insight into the device behavior. Test measurements of VDMOS are used to verify the model.

Original languageEnglish (US)
Pages (from-to)157-164
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume43
Issue number1
DOIs
StatePublished - 1996

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depletion
Capacitance
capacitance
Doping (additives)
saturation
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

A static, physical VDMOS model based on the charge-sheet model. / Victory, James J.; Sanchez, Julian J.; Demassa, Thomas A.; Welfert, Bruno.

In: IEEE Transactions on Electron Devices, Vol. 43, No. 1, 1996, p. 157-164.

Research output: Contribution to journalArticle

Victory, James J. ; Sanchez, Julian J. ; Demassa, Thomas A. ; Welfert, Bruno. / A static, physical VDMOS model based on the charge-sheet model. In: IEEE Transactions on Electron Devices. 1996 ; Vol. 43, No. 1. pp. 157-164.
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