A SPICE compact model of metal oxide resistive switching memory with variations

Ximeng Guan, Shimeng Yu, H. S Philip Wong

Research output: Contribution to journalArticle

107 Citations (Scopus)

Abstract

A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.

Original languageEnglish (US)
Article number6296677
Pages (from-to)1405-1407
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
StatePublished - 2012
Externally publishedYes

Fingerprint

SPICE
Oxides
Metals
Data storage equipment
Electric potential
Temperature

Keywords

  • Compact model
  • resistive random access memory (RRAM) conducting filament
  • resistive switching
  • temperature
  • variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A SPICE compact model of metal oxide resistive switching memory with variations. / Guan, Ximeng; Yu, Shimeng; Wong, H. S Philip.

In: IEEE Electron Device Letters, Vol. 33, No. 10, 6296677, 2012, p. 1405-1407.

Research output: Contribution to journalArticle

Guan, Ximeng ; Yu, Shimeng ; Wong, H. S Philip. / A SPICE compact model of metal oxide resistive switching memory with variations. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 10. pp. 1405-1407.
@article{91d99742364644f7a77653f098169796,
title = "A SPICE compact model of metal oxide resistive switching memory with variations",
abstract = "A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.",
keywords = "Compact model, resistive random access memory (RRAM) conducting filament, resistive switching, temperature, variation",
author = "Ximeng Guan and Shimeng Yu and Wong, {H. S Philip}",
year = "2012",
doi = "10.1109/LED.2012.2210856",
language = "English (US)",
volume = "33",
pages = "1405--1407",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - A SPICE compact model of metal oxide resistive switching memory with variations

AU - Guan, Ximeng

AU - Yu, Shimeng

AU - Wong, H. S Philip

PY - 2012

Y1 - 2012

N2 - A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.

AB - A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.

KW - Compact model

KW - resistive random access memory (RRAM) conducting filament

KW - resistive switching

KW - temperature

KW - variation

UR - http://www.scopus.com/inward/record.url?scp=84866886745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866886745&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2210856

DO - 10.1109/LED.2012.2210856

M3 - Article

AN - SCOPUS:84866886745

VL - 33

SP - 1405

EP - 1407

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

M1 - 6296677

ER -