A SPICE compact model of metal oxide resistive switching memory with variations

Ximeng Guan, Shimeng Yu, H. S.Philip Wong

Research output: Contribution to journalArticle

125 Scopus citations

Abstract

A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.

Original languageEnglish (US)
Article number6296677
Pages (from-to)1405-1407
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
StatePublished - Sep 12 2012

Keywords

  • Compact model
  • resistive random access memory (RRAM) conducting filament
  • resistive switching
  • temperature
  • variation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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