@article{91d99742364644f7a77653f098169796,
title = "A SPICE compact model of metal oxide resistive switching memory with variations",
abstract = "A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfO x-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.",
keywords = "Compact model, resistive random access memory (RRAM) conducting filament, resistive switching, temperature, variation",
author = "Ximeng Guan and Shimeng Yu and Wong, {H. S.Philip}",
note = "Funding Information: Manuscript received July 8, 2012; accepted July 25, 2012. Date of publication September 6, 2012; date of current version September 21, 2012. This work was supported in part by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative, by the National Science Foundation (NSF) under Grant ECCS 0950305, by the Nanoelectronics Research Initiative (NRI) of Semiconductor Research Corporation through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale, and by MSD and C2S2, which are two of the six research centers funded under the Focus Center Research Program (a Semiconductor Research Corporation subsidiary). The work of S. Yu was supported by the Stanford Graduate Fellowship. The review of this letter was arranged by Editor M. Jurczak.",
year = "2012",
doi = "10.1109/LED.2012.2210856",
language = "English (US)",
volume = "33",
pages = "1405--1407",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}