A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Evan A. Clinton, Ehsan Vadiee, Chloe A.M. Fabien, Michael W. Moseley, Brendan P. Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1−xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1−xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1−xN are described and are capable of growing InxGa1−xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1−xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

Original languageEnglish (US)
Pages (from-to)3-11
Number of pages9
JournalSolid-State Electronics
Volume136
DOIs
StatePublished - Oct 1 2017

Fingerprint

Indium
Defect density
indium
Nitrogen
defects
synthesis
nitrogen
Chemical analysis
Metals
Epitaxial growth
Optoelectronic devices
epitaxy
Temperature
metals
Defects
miscibility gap
optoelectronic devices
light emission
Solar cells
emitters

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Clinton, E. A., Vadiee, E., Fabien, C. A. M., Moseley, M. W., Gunning, B. P., Doolittle, W. A., ... Ponce, F. (2017). A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions. Solid-State Electronics, 136, 3-11. https://doi.org/10.1016/j.sse.2017.06.020

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions. / Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A.M.; Moseley, Michael W.; Gunning, Brendan P.; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando.

In: Solid-State Electronics, Vol. 136, 01.10.2017, p. 3-11.

Research output: Contribution to journalArticle

Clinton, EA, Vadiee, E, Fabien, CAM, Moseley, MW, Gunning, BP, Doolittle, WA, Fischer, AM, Wei, YO, Xie, H & Ponce, F 2017, 'A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions', Solid-State Electronics, vol. 136, pp. 3-11. https://doi.org/10.1016/j.sse.2017.06.020
Clinton, Evan A. ; Vadiee, Ehsan ; Fabien, Chloe A.M. ; Moseley, Michael W. ; Gunning, Brendan P. ; Doolittle, W. Alan ; Fischer, Alec M. ; Wei, Yong O. ; Xie, Hongen ; Ponce, Fernando. / A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions. In: Solid-State Electronics. 2017 ; Vol. 136. pp. 3-11.
@article{960c8272e6b14c8db5eab87949b9c1c2,
title = "A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions",
abstract = "A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1−xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1−xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1−xN are described and are capable of growing InxGa1−xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1−xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.",
author = "Clinton, {Evan A.} and Ehsan Vadiee and Fabien, {Chloe A.M.} and Moseley, {Michael W.} and Gunning, {Brendan P.} and Doolittle, {W. Alan} and Fischer, {Alec M.} and Wei, {Yong O.} and Hongen Xie and Fernando Ponce",
year = "2017",
month = "10",
day = "1",
doi = "10.1016/j.sse.2017.06.020",
language = "English (US)",
volume = "136",
pages = "3--11",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

AU - Clinton, Evan A.

AU - Vadiee, Ehsan

AU - Fabien, Chloe A.M.

AU - Moseley, Michael W.

AU - Gunning, Brendan P.

AU - Doolittle, W. Alan

AU - Fischer, Alec M.

AU - Wei, Yong O.

AU - Xie, Hongen

AU - Ponce, Fernando

PY - 2017/10/1

Y1 - 2017/10/1

N2 - A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1−xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1−xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1−xN are described and are capable of growing InxGa1−xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1−xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

AB - A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1−xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1−xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1−xN are described and are capable of growing InxGa1−xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1−xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

UR - http://www.scopus.com/inward/record.url?scp=85022053878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022053878&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2017.06.020

DO - 10.1016/j.sse.2017.06.020

M3 - Article

VL - 136

SP - 3

EP - 11

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -