A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

C. L. Hinkle, C. Fulton, R. J. Nemanich, G. Lucovsky

Research output: Contribution to journalConference article

41 Scopus citations

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original languageEnglish (US)
Pages (from-to)257-262
Number of pages6
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
StatePublished - Apr 1 2004
Externally publishedYes
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: Jun 18 2003Jun 20 2003

Keywords

  • Direct tunneling
  • High- K dielectrics
  • Stacked gate dielectrics
  • Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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