A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

C. L. Hinkle, C. Fulton, Robert Nemanich, G. Lucovsky

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original languageEnglish (US)
Pages (from-to)257-262
Number of pages6
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
StatePublished - Apr 2004
Externally publishedYes

Fingerprint

Gate dielectrics
Conduction bands
CMOS
Rare Earth Metals
Electron tunneling
Electrons
Oxides
Rare earths
Transition metals
conduction bands
electrons
Permittivity
electron tunneling
optical measurement
proportion
rare earth elements
transition metals
permittivity
oxides
energy

Keywords

  • Direct tunneling
  • High- K dielectrics
  • Stacked gate dielectrics
  • Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices. / Hinkle, C. L.; Fulton, C.; Nemanich, Robert; Lucovsky, G.

In: Microelectronic Engineering, Vol. 72, No. 1-4, 04.2004, p. 257-262.

Research output: Contribution to journalArticle

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