A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

C. L. Hinkle; C. Fulton; R. J. Nemanich; G. Lucovsky

doi:10.1016/j.mee.2003.12.047

A novel approach for determining the effective tunneling mass of electrons in HfO₂ and other high-K alternative gate dielectrics for advanced CMOS devices

C. L. Hinkle, C. Fulton, R. J. Nemanich, G. Lucovsky

Research output: Contribution to journal › Conference article › peer-review

45 Scopus citations

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, E_B, and the effective electron tunneling mass, m_eff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original language	English (US)
Pages (from-to)	257-262
Number of pages	6
Journal	Microelectronic Engineering
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/j.mee.2003.12.047
State	Published - Apr 2004
Externally published	Yes
Event	Proceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain Duration: Jun 18 2003 → Jun 20 2003

Keywords

Direct tunneling
High- K dielectrics
Stacked gate dielectrics
Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2003.12.047

Cite this

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title = "A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices",

abstract = "There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.",

keywords = "Direct tunneling, High- K dielectrics, Stacked gate dielectrics, Tunneling mass-conduction band offset energy product",

author = "Hinkle, {C. L.} and C. Fulton and Nemanich, {R. J.} and G. Lucovsky",

note = "Funding Information: Supported by the Semiconductor Research Corporation (SRC) and the Office of Naval Research (ONR). ; Proceedings of the 13th Biennial Conference on Insulating Film ; Conference date: 18-06-2003 Through 20-06-2003",

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T1 - A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

AU - Hinkle, C. L.

AU - Fulton, C.

AU - Nemanich, R. J.

AU - Lucovsky, G.

N1 - Funding Information: Supported by the Semiconductor Research Corporation (SRC) and the Office of Naval Research (ONR).

PY - 2004/4

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AB - There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

KW - Direct tunneling

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KW - Stacked gate dielectrics

KW - Tunneling mass-conduction band offset energy product

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