TY - JOUR
T1 - A new analytic approximation to general diode equation
AU - He, Jin
AU - Fang, Ming
AU - Li, Bo
AU - Cao, Yu
N1 - Funding Information:
This work is subsided by the special funds for major State Basic Research Project (973) and National Nature Science Foundation of China (NNSFC: 90607017). This work is also partially support by a competitive Earmarked Grant HKUST6289/04E from the Research Grant Council of Hong Kong SAR.
PY - 2006/7
Y1 - 2006/7
N2 - This paper presents a new analytic approximation to the general diode equation with the presence of a series resistance. Using exact first- and second-order derivatives and a modified Newton-Raphson formula, a concise analytic approximate solution is derived for the diode equation with the significant improvement on the accuracy and computation efficiency, thus it is very useful for users to implement the diode model and the inversion charge models in other advanced MOSFET compact models such as ACM, EKV and BSIM5 into the circuit simulators, e.g., SPICE for circuit simulation and analysis.
AB - This paper presents a new analytic approximation to the general diode equation with the presence of a series resistance. Using exact first- and second-order derivatives and a modified Newton-Raphson formula, a concise analytic approximate solution is derived for the diode equation with the significant improvement on the accuracy and computation efficiency, thus it is very useful for users to implement the diode model and the inversion charge models in other advanced MOSFET compact models such as ACM, EKV and BSIM5 into the circuit simulators, e.g., SPICE for circuit simulation and analysis.
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U2 - 10.1016/j.sse.2006.06.013
DO - 10.1016/j.sse.2006.06.013
M3 - Article
AN - SCOPUS:33747437340
SN - 0038-1101
VL - 50
SP - 1371
EP - 1374
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7-8
ER -