A method for generating structurally aligned high quality grids and its application to the simulation of a trench gate MOSFET

Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The error of the numeric approximation of the semiconductor device equations particularly depends on the grid used for the discretization. Since the most interesting regions of the device are generally straightforward to identify, the method of choice is to use structurally aligned grids. Here, we present an algorithm for generating structurally aligned grids, including anisotropy, and for producing grids whose resolution varies over several orders of magnitude. Furthermore, the areas with increased resolution and the corresponding resolutions can be defined in a flexible manner and criteria on grid quality can be enforced. The grid generation algorithm was applied to sample structures which highlight the features of this method. Furthermore we generated grids for the simulation of a high voltage trench gate MOSFET. In order to resolve the junction regions accurately, four regions were defined where the grid was grown in several directions with varying resolutions. Finally device simulations performed by MINIMOS NT show current voltage characteristics and the threshold voltage.

Original languageEnglish (US)
Title of host publicationESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference
EditorsJose Franca, Paulo Freitas
PublisherIEEE Computer Society
Pages457-460
Number of pages4
ISBN (Electronic)0780379993
ISBN (Print)9780780379992
DOIs
StatePublished - Jan 1 2003
Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Estoril, Portugal
Duration: Sep 16 2003Sep 18 2003

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other33rd European Solid-State Device Research Conference, ESSDERC 2003
CountryPortugal
CityEstoril
Period9/16/039/18/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Heitzinger, C., Sheikholeslami, A., Park, J. M., & Selberherr, S. (2003). A method for generating structurally aligned high quality grids and its application to the simulation of a trench gate MOSFET. In J. Franca, & P. Freitas (Eds.), ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference (pp. 457-460). [1256912] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2003.1256912