Abstract
The present invention relates generally to a novel method for chemical passivation of the surface of III-V semiconductor materials, involving reaction with carbon disulfide (CS2) gas. The method has been tested for surface passivation of the III-V semiconductor GaAs, but may be extended to other materials such as A11-xGAxAs or InP. The method involves exposure of the semiconductor surface to CS2vapor at pressures of 1 to 15 atm at temperatures of 250 to 450 oC. The resulting passivation layer consists of a homogeneous yellow film, several hundred angstrom in thickness. This passivation film confers desirable electronic properties upon the GaAs semi- conductor, specially a five- to twenty-fold increase in photo luminescence peak intensity, which is a direct indication of reduced electron-hole surface recombination velocity. The passivation layer was found to remain
| Original language | English (US) |
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| State | Published - Jan 1 1900 |