A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

G. Song; M. Y. Ali; M. Tao

doi:10.1016/j.sse.2008.07.008

A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

G. Song, M. Y. Ali, M. Tao

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance-voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current-voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p-n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current-voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.

Original language	English (US)
Pages (from-to)	1778-1781
Number of pages	4
Journal	Solid-State Electronics
Volume	52
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2008.07.008
State	Published - Nov 2008
Externally published	Yes

Keywords

Schottky barriers
Semiconductor-metal interfaces
Silicon
Sulfur
Surface treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2008.07.008

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title = "A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface",

abstract = "By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance-voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current-voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p-n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current-voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.",

keywords = "Schottky barriers, Semiconductor-metal interfaces, Silicon, Sulfur, Surface treatment",

author = "G. Song and Ali, {M. Y.} and M. Tao",

note = "Funding Information: This work was supported by the National Science Foundation under Grants 0322762 and 0620319. ",

year = "2008",

month = nov,

doi = "10.1016/j.sse.2008.07.008",

language = "English (US)",

volume = "52",

pages = "1778--1781",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

AU - Song, G.

AU - Ali, M. Y.

AU - Tao, M.

N1 - Funding Information: This work was supported by the National Science Foundation under Grants 0322762 and 0620319.

PY - 2008/11

Y1 - 2008/11

N2 - By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance-voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current-voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p-n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current-voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.

AB - By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance-voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current-voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p-n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current-voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.

KW - Schottky barriers

KW - Semiconductor-metal interfaces

KW - Silicon

KW - Sulfur

KW - Surface treatment

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JF - Solid-State Electronics

IS - 11

ER -

A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

Abstract

Keywords

ASJC Scopus subject areas

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