A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

G. Song, M. Y. Ali, M. Tao

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance-voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current-voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p-n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current-voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.

Original languageEnglish (US)
Pages (from-to)1778-1781
Number of pages4
JournalSolid-State Electronics
Volume52
Issue number11
DOIs
StatePublished - Nov 1 2008
Externally publishedYes

Keywords

  • Schottky barriers
  • Semiconductor-metal interfaces
  • Silicon
  • Sulfur
  • Surface treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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