A general model for PVD aluminum deposition

T. S. Cale, T. H. Gandy, M. K. Jain, M. Ramaswami, Gregory Raupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one.

Original languageEnglish (US)
Title of host publication1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages350-352
Number of pages3
ISBN (Electronic)087942673X, 9780879426736
DOIs
StatePublished - Jan 1 1991
Event8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 - Santa Clara, United States
Duration: Jun 11 1991Jun 12 1991

Publication series

Name1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

Conference

Conference8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
CountryUnited States
CitySanta Clara
Period6/11/916/12/91

Fingerprint

Physical vapor deposition
Aluminum
Surface diffusion
Aspect ratio

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Cale, T. S., Gandy, T. H., Jain, M. K., Ramaswami, M., & Raupp, G. (1991). A general model for PVD aluminum deposition. In 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 (pp. 350-352). [153022] (1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VMIC.1991.153022

A general model for PVD aluminum deposition. / Cale, T. S.; Gandy, T. H.; Jain, M. K.; Ramaswami, M.; Raupp, Gregory.

1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 350-352 153022 (1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cale, TS, Gandy, TH, Jain, MK, Ramaswami, M & Raupp, G 1991, A general model for PVD aluminum deposition. in 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991., 153022, 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991, Institute of Electrical and Electronics Engineers Inc., pp. 350-352, 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991, Santa Clara, United States, 6/11/91. https://doi.org/10.1109/VMIC.1991.153022
Cale TS, Gandy TH, Jain MK, Ramaswami M, Raupp G. A general model for PVD aluminum deposition. In 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 350-352. 153022. (1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991). https://doi.org/10.1109/VMIC.1991.153022
Cale, T. S. ; Gandy, T. H. ; Jain, M. K. ; Ramaswami, M. ; Raupp, Gregory. / A general model for PVD aluminum deposition. 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 350-352 (1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991).
@inproceedings{355e819827234ba9a666c34b4d63a9ca,
title = "A general model for PVD aluminum deposition",
abstract = "A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one.",
author = "Cale, {T. S.} and Gandy, {T. H.} and Jain, {M. K.} and M. Ramaswami and Gregory Raupp",
year = "1991",
month = "1",
day = "1",
doi = "10.1109/VMIC.1991.153022",
language = "English (US)",
series = "1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "350--352",
booktitle = "1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991",

}

TY - GEN

T1 - A general model for PVD aluminum deposition

AU - Cale, T. S.

AU - Gandy, T. H.

AU - Jain, M. K.

AU - Ramaswami, M.

AU - Raupp, Gregory

PY - 1991/1/1

Y1 - 1991/1/1

N2 - A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one.

AB - A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one.

UR - http://www.scopus.com/inward/record.url?scp=84957342588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957342588&partnerID=8YFLogxK

U2 - 10.1109/VMIC.1991.153022

DO - 10.1109/VMIC.1991.153022

M3 - Conference contribution

AN - SCOPUS:84957342588

T3 - 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

SP - 350

EP - 352

BT - 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

PB - Institute of Electrical and Electronics Engineers Inc.

ER -