A general model for PVD aluminum deposition

T. S. Cale, T. H. Gandy, M. K. Jain, M. Ramaswami, G. B. Raupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one.

Original languageEnglish (US)
Title of host publication1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages350-352
Number of pages3
ISBN (Electronic)087942673X, 9780879426736
DOIs
StatePublished - Jan 1 1991
Event8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 - Santa Clara, United States
Duration: Jun 11 1991Jun 12 1991

Publication series

Name1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

Conference

Conference8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
CountryUnited States
CitySanta Clara
Period6/11/916/12/91

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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