A dielectric-defined lateral heterojunction in a monolayer semiconductor

M. Iqbal Bakti Utama, Hans Kleemann, Wenyu Zhao, Chin Shen Ong, Felipe H. da Jornada, Diana Y. Qiu, Hui Cai, Han Li, Rai Kou, Sihan Zhao, Sheng Wang, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Alex Zettl, Steven G. Louie, Feng Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Owing to their low dimensionality, two-dimensional semiconductors, such as monolayer molybdenum disulfide, have a range of properties that make them valuable in the development of nanoelectronics. For example, the electronic bandgap of these semiconductors is not an intrinsic physical parameter and can be engineered by manipulating the dielectric environment around the monolayer. Here we show that this dielectric-dependent electronic bandgap can be used to engineer a lateral heterojunction within a homogeneous MoS 2 monolayer. We visualize the heterostructure with Kelvin probe force microscopy and examine its influence on electrical transport experimentally and theoretically. We observe a lateral heterojunction with an approximately 90 meV band offset due to the differing degrees of bandgap renormalization of monolayer MoS 2 when it is placed on a substrate in which one segment is made from an amorphous fluoropolymer (Cytop) and another segment is made of hexagonal boron nitride. This heterostructure leads to a diode-like electrical transport with a strong asymmetric behaviour.

Original languageEnglish (US)
Pages (from-to)60-65
Number of pages6
JournalNature Electronics
Volume2
Issue number2
DOIs
StatePublished - Feb 1 2019

Fingerprint

Heterojunctions
heterojunctions
Monolayers
Semiconductor materials
Energy gap
molybdenum disulfides
fluoropolymers
boron nitrides
electronics
Fluorine containing polymers
engineers
Nanoelectronics
Boron nitride
diodes
Molybdenum
microscopy
Microscopic examination
Diodes
probes
Engineers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Utama, M. I. B., Kleemann, H., Zhao, W., Ong, C. S., da Jornada, F. H., Qiu, D. Y., ... Wang, F. (2019). A dielectric-defined lateral heterojunction in a monolayer semiconductor. Nature Electronics, 2(2), 60-65. https://doi.org/10.1038/s41928-019-0207-4

A dielectric-defined lateral heterojunction in a monolayer semiconductor. / Utama, M. Iqbal Bakti; Kleemann, Hans; Zhao, Wenyu; Ong, Chin Shen; da Jornada, Felipe H.; Qiu, Diana Y.; Cai, Hui; Li, Han; Kou, Rai; Zhao, Sihan; Wang, Sheng; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Louie, Steven G.; Wang, Feng.

In: Nature Electronics, Vol. 2, No. 2, 01.02.2019, p. 60-65.

Research output: Contribution to journalArticle

Utama, MIB, Kleemann, H, Zhao, W, Ong, CS, da Jornada, FH, Qiu, DY, Cai, H, Li, H, Kou, R, Zhao, S, Wang, S, Watanabe, K, Taniguchi, T, Tongay, S, Zettl, A, Louie, SG & Wang, F 2019, 'A dielectric-defined lateral heterojunction in a monolayer semiconductor' Nature Electronics, vol. 2, no. 2, pp. 60-65. https://doi.org/10.1038/s41928-019-0207-4
Utama MIB, Kleemann H, Zhao W, Ong CS, da Jornada FH, Qiu DY et al. A dielectric-defined lateral heterojunction in a monolayer semiconductor. Nature Electronics. 2019 Feb 1;2(2):60-65. https://doi.org/10.1038/s41928-019-0207-4
Utama, M. Iqbal Bakti ; Kleemann, Hans ; Zhao, Wenyu ; Ong, Chin Shen ; da Jornada, Felipe H. ; Qiu, Diana Y. ; Cai, Hui ; Li, Han ; Kou, Rai ; Zhao, Sihan ; Wang, Sheng ; Watanabe, Kenji ; Taniguchi, Takashi ; Tongay, Sefaattin ; Zettl, Alex ; Louie, Steven G. ; Wang, Feng. / A dielectric-defined lateral heterojunction in a monolayer semiconductor. In: Nature Electronics. 2019 ; Vol. 2, No. 2. pp. 60-65.
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