A conductance-based silicon neuron with membrane-voltage dependent temporal dynamics

J. Tomas, S. Saïghi, S. Renaud, J. Silver, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents an analog neuromimetic ASIC that integrates Hodgkin-Huxley (HH) model formalism, including the membrane voltage dependency of temporal dynamics. This circuit computes in real-time and in analog continuous mode the electrical activity of a neural cell. We have developed a library of sub-circuits calculating the elementary mathematical functions encountered in the HH models. Those sub-circuits are organized to form the model set of equations. W e will detail the blocks dedicated to the temporal dynamics and present measurement performed on the chip.

Original languageEnglish (US)
Title of host publicationProceedings of the 8th IEEE International NEWCAS Conference, NEWCAS2010
PublisherIEEE Computer Society
Pages377-380
Number of pages4
ISBN (Print)9781424468058
DOIs
StatePublished - Jan 1 2010

Publication series

NameProceedings of the 8th IEEE International NEWCAS Conference, NEWCAS2010

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Tomas, J., Saïghi, S., Renaud, S., Silver, J., & Barnaby, H. (2010). A conductance-based silicon neuron with membrane-voltage dependent temporal dynamics. In Proceedings of the 8th IEEE International NEWCAS Conference, NEWCAS2010 (pp. 377-380). [5604001] (Proceedings of the 8th IEEE International NEWCAS Conference, NEWCAS2010). IEEE Computer Society. https://doi.org/10.1109/NEWCAS.2010.5604001