A comparison of GaN-based power stages for high-switching speed medium-power converters

Ashwath Hegde, Yu Long, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

Original languageEnglish (US)
Title of host publication2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages213-219
Number of pages7
Volume2017-December
ISBN (Electronic)9781538631171
DOIs
StatePublished - Dec 7 2017
Event5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 - Albuquerque, United States
Duration: Oct 30 2017Nov 1 2017

Other

Other5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
CountryUnited States
CityAlbuquerque
Period10/30/1711/1/17

Fingerprint

Power converters
Electron mobility
Current density

Keywords

  • Buck
  • COTS
  • Efficiency
  • GaN
  • HEMT
  • Multi-phase
  • Single-stage
  • Stacked interleaved
  • Switching frequency

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hegde, A., Long, Y., & Kitchen, J. (2017). A comparison of GaN-based power stages for high-switching speed medium-power converters. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 (Vol. 2017-December, pp. 213-219). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2017.8170549

A comparison of GaN-based power stages for high-switching speed medium-power converters. / Hegde, Ashwath; Long, Yu; Kitchen, Jennifer.

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December Institute of Electrical and Electronics Engineers Inc., 2017. p. 213-219.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hegde, A, Long, Y & Kitchen, J 2017, A comparison of GaN-based power stages for high-switching speed medium-power converters. in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. vol. 2017-December, Institute of Electrical and Electronics Engineers Inc., pp. 213-219, 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, Albuquerque, United States, 10/30/17. https://doi.org/10.1109/WiPDA.2017.8170549
Hegde A, Long Y, Kitchen J. A comparison of GaN-based power stages for high-switching speed medium-power converters. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December. Institute of Electrical and Electronics Engineers Inc. 2017. p. 213-219 https://doi.org/10.1109/WiPDA.2017.8170549
Hegde, Ashwath ; Long, Yu ; Kitchen, Jennifer. / A comparison of GaN-based power stages for high-switching speed medium-power converters. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December Institute of Electrical and Electronics Engineers Inc., 2017. pp. 213-219
@inproceedings{747a23e9097c41379a2a275a8edc98ea,
title = "A comparison of GaN-based power stages for high-switching speed medium-power converters",
abstract = "Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80{\%} peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.",
keywords = "Buck, COTS, Efficiency, GaN, HEMT, Multi-phase, Single-stage, Stacked interleaved, Switching frequency",
author = "Ashwath Hegde and Yu Long and Jennifer Kitchen",
year = "2017",
month = "12",
day = "7",
doi = "10.1109/WiPDA.2017.8170549",
language = "English (US)",
volume = "2017-December",
pages = "213--219",
booktitle = "2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A comparison of GaN-based power stages for high-switching speed medium-power converters

AU - Hegde, Ashwath

AU - Long, Yu

AU - Kitchen, Jennifer

PY - 2017/12/7

Y1 - 2017/12/7

N2 - Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

AB - Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

KW - Buck

KW - COTS

KW - Efficiency

KW - GaN

KW - HEMT

KW - Multi-phase

KW - Single-stage

KW - Stacked interleaved

KW - Switching frequency

UR - http://www.scopus.com/inward/record.url?scp=85046627812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046627812&partnerID=8YFLogxK

U2 - 10.1109/WiPDA.2017.8170549

DO - 10.1109/WiPDA.2017.8170549

M3 - Conference contribution

AN - SCOPUS:85046627812

VL - 2017-December

SP - 213

EP - 219

BT - 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -