80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, M. C. Hersam

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This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

Original languageEnglish (US)
Article number243505
JournalApplied Physics Letters
Issue number24
StatePublished - 2009
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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