80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret; H. Happy; G. Dambrine; V. Derycke; J. P. Bourgoin; A. A. Green; M. C. Hersam

doi:10.1063/1.3155212

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, M. C. Hersam

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163 Scopus citations

Abstract

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

Original language	English (US)
Article number	243505
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3155212
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3155212

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title = "80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes",

abstract = "This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.",

author = "L. Nougaret and H. Happy and G. Dambrine and V. Derycke and Bourgoin, {J. P.} and Green, {A. A.} and Hersam, {M. C.}",

note = "Funding Information: The authors thank N. Chimot for his help with nanotubes deposition. This work was partially supported by the ANR project HF-CNT under the contract number ANR-05–NANO-055.",

year = "2009",

doi = "10.1063/1.3155212",

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volume = "94",

journal = "Applied Physics Letters",

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T1 - 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

AU - Nougaret, L.

AU - Happy, H.

AU - Dambrine, G.

AU - Derycke, V.

AU - Bourgoin, J. P.

AU - Green, A. A.

AU - Hersam, M. C.

N1 - Funding Information: The authors thank N. Chimot for his help with nanotubes deposition. This work was partially supported by the ANR project HF-CNT under the contract number ANR-05–NANO-055.

PY - 2009

Y1 - 2009

N2 - This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

AB - This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

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