Abstract

This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.

Original languageEnglish (US)
Title of host publicationProceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages359-362
Number of pages4
Volume2015-November
ISBN (Electronic)9781479976416
DOIs
Publication statusPublished - Nov 25 2015
EventIEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 - Phoenix, United States
Duration: May 17 2015May 19 2015

Other

OtherIEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
CountryUnited States
CityPhoenix
Period5/17/155/19/15

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Keywords

  • MESFETs
  • silicon-on-insulator

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wilk, S. J., Lepkowski, W., Habibimehr, P., & Thornton, T. (2015). 4-terminal Angelov model for SOI CMOS MESFETs. In Proceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 (Vol. 2015-November, pp. 359-362). [7337779] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2015.7337779