This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.

Original languageEnglish (US)
Title of host publicationProceedings of the 2015 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781479976416
StatePublished - Nov 25 2015
EventIEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015 - Phoenix, United States
Duration: May 17 2015May 19 2015


OtherIEEE Radio Frequency Integrated Circuits Symposium, RFIC 2015
CountryUnited States


  • silicon-on-insulator

ASJC Scopus subject areas

  • Engineering(all)

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