3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory

Bin Gao, Bing Chen, Rui Liu, Feifei Zhang, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

Original languageEnglish (US)
Article number6780612
Pages (from-to)1377-1381
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number5
DOIs
StatePublished - 2014

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Data storage equipment
Multilayers

Keywords

  • 3-D integration
  • cross-point array
  • resistive random access memory (RRAM)
  • resistive switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Gao, B., Chen, B., Liu, R., Zhang, F., Huang, P., Liu, L., ... Wong, H. S. P. (2014). 3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory. IEEE Transactions on Electron Devices, 61(5), 1377-1381. [6780612]. https://doi.org/10.1109/TED.2014.2311655

3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory. / Gao, Bin; Chen, Bing; Liu, Rui; Zhang, Feifei; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Chen, Hong Yu; Yu, Shimeng; Wong, H. S Philip.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 5, 6780612, 2014, p. 1377-1381.

Research output: Contribution to journalArticle

Gao, B, Chen, B, Liu, R, Zhang, F, Huang, P, Liu, L, Liu, X, Kang, J, Chen, HY, Yu, S & Wong, HSP 2014, '3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory', IEEE Transactions on Electron Devices, vol. 61, no. 5, 6780612, pp. 1377-1381. https://doi.org/10.1109/TED.2014.2311655
Gao, Bin ; Chen, Bing ; Liu, Rui ; Zhang, Feifei ; Huang, Peng ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng ; Chen, Hong Yu ; Yu, Shimeng ; Wong, H. S Philip. / 3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory. In: IEEE Transactions on Electron Devices. 2014 ; Vol. 61, No. 5. pp. 1377-1381.
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