3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory

Bin Gao; Bing Chen; Rui Liu; Feifei Zhang; Peng Huang; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang; Hong Yu Chen; Shimeng Yu; H. S Philip Wong

doi:10.1109/TED.2014.2311655

3-D cross-point array operation on AlO_y/HfO_x-based vertical resistive switching memory

Bin Gao, Bing Chen, Rui Liu, Feifei Zhang, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlO_y/HfO _x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

Original language	English (US)
Article number	6780612
Pages (from-to)	1377-1381
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	5
DOIs	https://doi.org/10.1109/TED.2014.2311655
State	Published - May 2014

Keywords

3-D integration
cross-point array
resistive random access memory (RRAM)
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2014.2311655

Cite this

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title = "3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory",

abstract = "A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.",

keywords = "3-D integration, cross-point array, resistive random access memory (RRAM), resistive switching",

author = "Bin Gao and Bing Chen and Rui Liu and Feifei Zhang and Peng Huang and Lifeng Liu and Xiaoyan Liu and Jinfeng Kang and Chen, {Hong Yu} and Shimeng Yu and Wong, {H. S Philip}",

year = "2014",

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T1 - 3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory

AU - Gao, Bin

AU - Chen, Bing

AU - Liu, Rui

AU - Zhang, Feifei

AU - Huang, Peng

AU - Liu, Lifeng

AU - Liu, Xiaoyan

AU - Kang, Jinfeng

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Wong, H. S Philip

PY - 2014/5

Y1 - 2014/5

N2 - A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

AB - A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

KW - 3-D integration

KW - cross-point array

KW - resistive random access memory (RRAM)

KW - resistive switching

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