3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory

Bin Gao, Bing Chen, Rui Liu, Feifei Zhang, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

Original languageEnglish (US)
Article number6780612
Pages (from-to)1377-1381
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number5
DOIs
StatePublished - May 2014

    Fingerprint

Keywords

  • 3-D integration
  • cross-point array
  • resistive random access memory (RRAM)
  • resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Gao, B., Chen, B., Liu, R., Zhang, F., Huang, P., Liu, L., Liu, X., Kang, J., Chen, H. Y., Yu, S., & Wong, H. S. P. (2014). 3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory. IEEE Transactions on Electron Devices, 61(5), 1377-1381. [6780612]. https://doi.org/10.1109/TED.2014.2311655