A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.
- 3-D integration
- cross-point array
- resistive random access memory (RRAM)
- resistive switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering