100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

Original languageEnglish (US)
Article number1600699
JournalPhysica Status Solidi (B) Basic Research
Volume254
Issue number8
DOIs
StatePublished - Aug 2017

Keywords

  • BAlN
  • MOCVD
  • boron
  • phases
  • wurtzite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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