Investigation of Radiation Effects in Advanced Microelectronic Devices for developing predictive models of degradation

Investigation of Radiation Effects in Advanced Microelectronic Devices for developing predictive models of degradation Investigation of Radiation Effects in Advanced Microelectronic Devices for developing predictive models of degradation This effort will combine the capabilities of (CFDRC) with the complementary expertise of researchers at Arizona State University (ASU). The technical approach for the effort will be based on CFDRCs NanoTCAD-based semiconductor device simulation and radiation-effects modeling framework coupled with advanced Electron Microscopy based characterization techniques developed and refined by the ASU Team. While CFDRC currently has proven in-house TCAD-based device modeling, molecular dynamics simulation and machine learning capabilities, the ASU team has strong expertise and world-class facilities in electron microscopy based techniques. The ASU team will also leverage in-house expertise on radiation effects in devices, especially electrical measurements. The ASU team has device structures currently available (oxide-nitride dielectric stacks), which have been studied for radiation exposure and its effects on the electrical performance.