Effects of Crystal Polarity on the Properties of InGaN Based Light Emitting Heterostructures

Project: Research project

Project Details

Description

Effects of Crystal Polarity on the Properties of InGaN Based Light Emitting Heterostructures Effects of Crystal Polarity on the Properties of InGaN Based Light Emitting Heterostructures
StatusFinished
Effective start/end date11/15/0711/15/10

Funding

  • DOD: Defense Advanced Research Projects Agency (DARPA): $797,907.00

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