Advancing Semiconductor Materials and Device Characterization using Aberration-Corrected Electron Microscopy

Project: Research project

Description

The overall objective of this research is to characterize the microstructure of targeted semiconductor-based alloy systems, using advanced electron microscopy techniques. The heterostructures planned for study will mostly be based on Group II-VI and Group III-V compound alloys grown initially on common substrates, such as Si, GaAs and sapphire. Representative specimens for examination will be provided by ARL scientists, who will collaborate closely with the postdoctoral scholar based at Arizona State University and supported by ARL on this Cooperative Agreement, who will be responsible for carrying out the bulk of the microscopy studies. A wide range of microscopy-based techniques, including state-of-the-art aberration-corrected electron microscopy, spectrum imaging and electron holography, will be used for materials characterization. Potential profiles in doped III-nitride heterostructures and interfacial sheet charge in nitride topological materials will be measured and quantified. Information about interface abruptness and composition gradients across the interfaces will be related to specific synthesis conditions and also correlated with changes in the electronic and other key physical properties. The improved structural knowledge obtained from the microscopy studies should be informative from a basic physics point of view, and also highly useful for clarifying future directions for IR, UV, plasmonic and topological device applications of interest to ARL.
StatusActive
Effective start/end date1/5/181/4/21

Funding

  • DOD-ARMY: Army Materiel Command (AMC): $734,756.00

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semiconductor devices
aberration
electron microscopy
microscopy
nitrides
holography
sapphire
physical properties
examination
gradients
microstructure
physics
synthesis
profiles
electronics
electrons