• 6847 Citations
  • 43 h-Index
1983 …2020
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Personal profile

Education/Academic qualification

PHD, University of Stuttgart

… → 1985

BS, Balserio Institute

… → 1980

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  • 6 Similar Profiles
Raman spectra Physics & Astronomy
Semiconductor materials Engineering & Materials Science
Raman scattering Engineering & Materials Science
Energy gap Engineering & Materials Science
Chemical vapor deposition Engineering & Materials Science
phonons Physics & Astronomy
Hydrides Engineering & Materials Science
Silicon Chemical Compounds

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1983 2018

  • 6847 Citations
  • 43 h-Index
  • 187 Article
  • 45 Conference contribution
  • 3 Patent
  • 2 Chapter

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Hydrides
Doping (additives)
Fabrication
Boron
Chemical activation

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J. & Menendez, J., Sep 5 2018, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., p. 35-36 2 p. 8456690

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spontaneous emission
spontaneous emission
Waveguides
Pumps
waveguides

Phonon-assisted optical absorption in germanium

Menendez, J., Lockwood, D. J., Zwinkels, J. C. & Noël, M., Oct 31 2018, In : Physical Review B. 98, 16, 165207.

Research output: Contribution to journalArticle

Germanium
Textbooks
Band structure
Light absorption
Electron energy levels
4 Citations
backscattering
deviation
thin films
diffraction
x rays
4 Citations

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

cryogenic temperature
Epitaxial growth
epitaxy
Chemical vapor deposition
Molecular beam epitaxy

Projects 1989 2020