David Smith

Regents Professor

Sustainability Scientist, GIOS: Sustainability Initiative
Regents' Professor, CLAS-NS: Physics
Regents'' Professor, Philanthropy and Nonprofit Innovation, Lodestar Center for
Regents'' Professor, CLAS-NS: Solid State Science, LeRoy Eyring Center for (CSSS)
Regents'' Professor, AINE: Photonics Innovation, Center for (CPhI)

18895 Citations
65 h-Index

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Personal profile

Education/Academic qualification

DSc, University of Melbourne

… → 1988

PHD, University of Melbourne

… → 1978

BS, University of Melbourne

… → 1970

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Molecular beam epitaxy Engineering & Materials Science

electron microscopy Physics & Astronomy

High resolution electron microscopy Engineering & Materials Science

molecular beam epitaxy Physics & Astronomy

high resolution Physics & Astronomy

Substrates Engineering & Materials Science

holography Physics & Astronomy

Electron holography Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1900 2019

18895 Citations
65 h-Index
724 Article
107 Conference contribution
9 Chapter
2 Patent
2 More
- 1 Comment/debate
- 1 Editorial

⁶⁰Co gamma ray damage in homoepitaxial β-Ga₂O₃ Schottky rectifiers

Yang, J., Koller, G. J., Fares, C., Ren, F., Pearton, S. J., Bae, J., Kim, J. & Smith, D., Jan 1 2019, In : ECS Journal of Solid State Science and Technology. 8, 7, p. Q3041-Q3045

Research output: Contribution to journal › Article

Open Access

Gamma rays

Irradiation

Alpha particles

Gate dielectrics

MOSFET devices

4 Citations (Scopus)

Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga₂O₃

Tadjer, M. J., Fares, C., Mahadik, N. A., Freitas, J. A., Smith, D., Sharma, R., Law, M. E., Ren, F., Pearton, S. J. & Kuramata, A., Jan 1 2019, In : ECS Journal of Solid State Science and Technology. 8, 7, p. Q3133-Q3139

Research output: Contribution to journal › Article

Open Access

Doping (additives)

Annealing

Ions

Recovery

Lattice constants

DC and dynamic switching characteristics of field-plated vertical geometry β-Ga ₂ O ₃ rectifiers

Yang, J., Carey, P., Ren, F., Chen, Y. T., Liao, Y., Chang, C. W., Lin, J., Tadjer, M., Pearton, S. J., Smith, D. & Kuramata, A., Jan 1 2019, Oxide-Based Materials and Devices X. Rogers, D. J., Teherani, F. H. & Look, D. C. (eds.). SPIE, 1091916. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10919).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

rectifiers

Electric breakdown

Breakdown

Reverse

Diodes

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

Polyakov, A. Y., Lee, I. H., Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Carey, P. H., Ren, F., Smith, D. & Pearton, S. J., Jun 1 2019, In : APL Materials. 7, 6, 061102.

Research output: Contribution to journal › Article

Open Access

Plasmas

Defects

Electron traps

Vapor phase epitaxy

Inductively coupled plasma