Two-dimensional process simulation using verified phenomenological models

Richard B. Fair, Carl Gardner, Michael J. Johnson, Stephen W. Kenkel, Donald J. Rose, John E. Rose, Ravi Subrahmanyan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. The authors describe a 2-D process simulator, PREDICT2, that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomenological diffusion coefficients. The phenomenological models are verified by comparing simulated and experimental results. This approach is compared with that of point-defect-based simulators. The experimental technique for measuring impurity profiles in two dimensions is outlined. The method for generating diffusion models is illustrated by examining 2-D phosphorous diffusion. Numerical simulations and experimental measurements are compared. The numerical methods used in the simulator are described, and directions for future work are suggested.

Original languageEnglish (US)
Pages (from-to)643-651
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume10
Issue number5
DOIs
StatePublished - May 1991
Externally publishedYes

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Simulators
Impurities
Silicon
Point defects
Numerical methods
Annealing
Computer simulation

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Two-dimensional process simulation using verified phenomenological models. / Fair, Richard B.; Gardner, Carl; Johnson, Michael J.; Kenkel, Stephen W.; Rose, Donald J.; Rose, John E.; Subrahmanyan, Ravi.

In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 10, No. 5, 05.1991, p. 643-651.

Research output: Contribution to journalArticle

Fair, Richard B. ; Gardner, Carl ; Johnson, Michael J. ; Kenkel, Stephen W. ; Rose, Donald J. ; Rose, John E. ; Subrahmanyan, Ravi. / Two-dimensional process simulation using verified phenomenological models. In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 1991 ; Vol. 10, No. 5. pp. 643-651.
@article{fa282e8aa9a84bd380d6e9dc04cc38be,
title = "Two-dimensional process simulation using verified phenomenological models",
abstract = "Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. The authors describe a 2-D process simulator, PREDICT2, that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomenological diffusion coefficients. The phenomenological models are verified by comparing simulated and experimental results. This approach is compared with that of point-defect-based simulators. The experimental technique for measuring impurity profiles in two dimensions is outlined. The method for generating diffusion models is illustrated by examining 2-D phosphorous diffusion. Numerical simulations and experimental measurements are compared. The numerical methods used in the simulator are described, and directions for future work are suggested.",
author = "Fair, {Richard B.} and Carl Gardner and Johnson, {Michael J.} and Kenkel, {Stephen W.} and Rose, {Donald J.} and Rose, {John E.} and Ravi Subrahmanyan",
year = "1991",
month = "5",
doi = "10.1109/43.79501",
language = "English (US)",
volume = "10",
pages = "643--651",
journal = "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems",
issn = "0278-0070",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Two-dimensional process simulation using verified phenomenological models

AU - Fair, Richard B.

AU - Gardner, Carl

AU - Johnson, Michael J.

AU - Kenkel, Stephen W.

AU - Rose, Donald J.

AU - Rose, John E.

AU - Subrahmanyan, Ravi

PY - 1991/5

Y1 - 1991/5

N2 - Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. The authors describe a 2-D process simulator, PREDICT2, that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomenological diffusion coefficients. The phenomenological models are verified by comparing simulated and experimental results. This approach is compared with that of point-defect-based simulators. The experimental technique for measuring impurity profiles in two dimensions is outlined. The method for generating diffusion models is illustrated by examining 2-D phosphorous diffusion. Numerical simulations and experimental measurements are compared. The numerical methods used in the simulator are described, and directions for future work are suggested.

AB - Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. The authors describe a 2-D process simulator, PREDICT2, that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomenological diffusion coefficients. The phenomenological models are verified by comparing simulated and experimental results. This approach is compared with that of point-defect-based simulators. The experimental technique for measuring impurity profiles in two dimensions is outlined. The method for generating diffusion models is illustrated by examining 2-D phosphorous diffusion. Numerical simulations and experimental measurements are compared. The numerical methods used in the simulator are described, and directions for future work are suggested.

UR - http://www.scopus.com/inward/record.url?scp=0026155741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026155741&partnerID=8YFLogxK

U2 - 10.1109/43.79501

DO - 10.1109/43.79501

M3 - Article

AN - SCOPUS:0026155741

VL - 10

SP - 643

EP - 651

JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

SN - 0278-0070

IS - 5

ER -