Silicide formation of polycrystalline silicon by direct metal implantation

Michael Kozicki, J. M. Robertson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper discusses an alternative method of silicide formation on poly-Si which allows a higher degree of control than conventional polycide formation methods. The technique involves the direct implantation of high doses of transition metal ions into the poly-Si layer, followed by a transient annealing step.

Original languageEnglish (US)
Pages (from-to)878-881
Number of pages4
JournalJournal of the Electrochemical Society
Volume136
Issue number3
StatePublished - Mar 1989

Fingerprint

Polysilicon
implantation
Metals
silicon
Ion implantation
metals
Transition metals
Metal ions
metal ions
transition metals
Annealing
dosage
annealing

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Silicide formation of polycrystalline silicon by direct metal implantation. / Kozicki, Michael; Robertson, J. M.

In: Journal of the Electrochemical Society, Vol. 136, No. 3, 03.1989, p. 878-881.

Research output: Contribution to journalArticle

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