Non-conventional routes to SiGe: P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior

Chi Xu, J. D. Gallagher, P. Sims, David Smith, Jose Menendez, John Kouvetakis

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11 Citations (Scopus)

Abstract

Ge-Si based n-type films are synthesized using specially designed hydrides P(SiH3)3, Ge3H8 and Ge4H10 for potential applications in next-generation CMOS technologies. The films are grown on Ge buffered Si(100) at 340°C using two complementary methods. The first employs a gas-source molecular epitaxy approach using Ge4H10 to produce materials with P doping densities varying from 4×1018 to a 3.5×1019 cm-3 threshold. These materials are co-doped with Si concentrations ranging from 3×1019 cm-3 to 3.5%, roughly in proportion with the amount of P(SiH3)3 used in the reactions. The second approach applies an alternative ultra-high vacuum chemical vapor deposition (UHV-CVD) technique and Ge3H8 in place of Ge4H10 to achieve ultra-high carrier concentrations up to ∼6×1019 cm-3. The Si content in this case is minimal - in the 2-6×1019 cm-3 range - indicating that the growth mechanism allows only 'impurity' levels of Si to be incorporated. The active carrier densities in both cases closely reflect the absolute P content, indicating that the P atoms are mostly substitutional. The electron mobilities are significantly higher compared to state-of-the-art prototypes, probably due to superior microstructure and dearth of inactive donors in the lattice. P-I-N diodes fabricated using the P(SiH3)3 compound show I-V characteristics comparable to state-of-the-art results for Ge-on-Si devices and are virtually undistinguishable from similar diodes doped with the P(GeH3)3 precursor. These results confirm P(SiH3)3 as a viable CVD doping source that is practical from a process standpoint and therefore attractive for industrial scale-up.

Original languageEnglish (US)
Article number045007
JournalSemiconductor Science and Technology
Volume30
Issue number4
DOIs
StatePublished - Apr 1 2015

Fingerprint

Polysilicon
Phosphorus
Carrier concentration
phosphorus
Chemical vapor deposition
Diodes
diodes
routes
Doping (additives)
vapor deposition
Derivatives
Electron mobility
Ultrahigh vacuum
synthesis
electron mobility
Epitaxial growth
Hydrides
epitaxy
ultrahigh vacuum
hydrides

Keywords

  • GeSi photodetectors
  • n-type Ge
  • P(SiH)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

@article{ff8e7f8212cf403b97d6d33ca49148ee,
title = "Non-conventional routes to SiGe: P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior",
abstract = "Ge-Si based n-type films are synthesized using specially designed hydrides P(SiH3)3, Ge3H8 and Ge4H10 for potential applications in next-generation CMOS technologies. The films are grown on Ge buffered Si(100) at 340°C using two complementary methods. The first employs a gas-source molecular epitaxy approach using Ge4H10 to produce materials with P doping densities varying from 4×1018 to a 3.5×1019 cm-3 threshold. These materials are co-doped with Si concentrations ranging from 3×1019 cm-3 to 3.5{\%}, roughly in proportion with the amount of P(SiH3)3 used in the reactions. The second approach applies an alternative ultra-high vacuum chemical vapor deposition (UHV-CVD) technique and Ge3H8 in place of Ge4H10 to achieve ultra-high carrier concentrations up to ∼6×1019 cm-3. The Si content in this case is minimal - in the 2-6×1019 cm-3 range - indicating that the growth mechanism allows only 'impurity' levels of Si to be incorporated. The active carrier densities in both cases closely reflect the absolute P content, indicating that the P atoms are mostly substitutional. The electron mobilities are significantly higher compared to state-of-the-art prototypes, probably due to superior microstructure and dearth of inactive donors in the lattice. P-I-N diodes fabricated using the P(SiH3)3 compound show I-V characteristics comparable to state-of-the-art results for Ge-on-Si devices and are virtually undistinguishable from similar diodes doped with the P(GeH3)3 precursor. These results confirm P(SiH3)3 as a viable CVD doping source that is practical from a process standpoint and therefore attractive for industrial scale-up.",
keywords = "GeSi photodetectors, n-type Ge, P(SiH)",
author = "Chi Xu and Gallagher, {J. D.} and P. Sims and David Smith and Jose Menendez and John Kouvetakis",
year = "2015",
month = "4",
day = "1",
doi = "10.1088/0268-1242/30/4/045007",
language = "English (US)",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "4",

}

TY - JOUR

T1 - Non-conventional routes to SiGe

T2 - P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior

AU - Xu, Chi

AU - Gallagher, J. D.

AU - Sims, P.

AU - Smith, David

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Ge-Si based n-type films are synthesized using specially designed hydrides P(SiH3)3, Ge3H8 and Ge4H10 for potential applications in next-generation CMOS technologies. The films are grown on Ge buffered Si(100) at 340°C using two complementary methods. The first employs a gas-source molecular epitaxy approach using Ge4H10 to produce materials with P doping densities varying from 4×1018 to a 3.5×1019 cm-3 threshold. These materials are co-doped with Si concentrations ranging from 3×1019 cm-3 to 3.5%, roughly in proportion with the amount of P(SiH3)3 used in the reactions. The second approach applies an alternative ultra-high vacuum chemical vapor deposition (UHV-CVD) technique and Ge3H8 in place of Ge4H10 to achieve ultra-high carrier concentrations up to ∼6×1019 cm-3. The Si content in this case is minimal - in the 2-6×1019 cm-3 range - indicating that the growth mechanism allows only 'impurity' levels of Si to be incorporated. The active carrier densities in both cases closely reflect the absolute P content, indicating that the P atoms are mostly substitutional. The electron mobilities are significantly higher compared to state-of-the-art prototypes, probably due to superior microstructure and dearth of inactive donors in the lattice. P-I-N diodes fabricated using the P(SiH3)3 compound show I-V characteristics comparable to state-of-the-art results for Ge-on-Si devices and are virtually undistinguishable from similar diodes doped with the P(GeH3)3 precursor. These results confirm P(SiH3)3 as a viable CVD doping source that is practical from a process standpoint and therefore attractive for industrial scale-up.

AB - Ge-Si based n-type films are synthesized using specially designed hydrides P(SiH3)3, Ge3H8 and Ge4H10 for potential applications in next-generation CMOS technologies. The films are grown on Ge buffered Si(100) at 340°C using two complementary methods. The first employs a gas-source molecular epitaxy approach using Ge4H10 to produce materials with P doping densities varying from 4×1018 to a 3.5×1019 cm-3 threshold. These materials are co-doped with Si concentrations ranging from 3×1019 cm-3 to 3.5%, roughly in proportion with the amount of P(SiH3)3 used in the reactions. The second approach applies an alternative ultra-high vacuum chemical vapor deposition (UHV-CVD) technique and Ge3H8 in place of Ge4H10 to achieve ultra-high carrier concentrations up to ∼6×1019 cm-3. The Si content in this case is minimal - in the 2-6×1019 cm-3 range - indicating that the growth mechanism allows only 'impurity' levels of Si to be incorporated. The active carrier densities in both cases closely reflect the absolute P content, indicating that the P atoms are mostly substitutional. The electron mobilities are significantly higher compared to state-of-the-art prototypes, probably due to superior microstructure and dearth of inactive donors in the lattice. P-I-N diodes fabricated using the P(SiH3)3 compound show I-V characteristics comparable to state-of-the-art results for Ge-on-Si devices and are virtually undistinguishable from similar diodes doped with the P(GeH3)3 precursor. These results confirm P(SiH3)3 as a viable CVD doping source that is practical from a process standpoint and therefore attractive for industrial scale-up.

KW - GeSi photodetectors

KW - n-type Ge

KW - P(SiH)

UR - http://www.scopus.com/inward/record.url?scp=84925590353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925590353&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/4/045007

DO - 10.1088/0268-1242/30/4/045007

M3 - Article

AN - SCOPUS:84925590353

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 4

M1 - 045007

ER -