Multi-scale Modeling of Total Ionizing Dose Effects in Commercial-off-the shelf Parts in Bipolar Technologies

A. Privat, Hugh Barnaby, P. C. Adell, B. S. Tolleson, Y. Wang, X. Han, P. Davis, B. R. Rax, T. E. Buchheit

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A multi-scale modeling platform that supports the “virtual” qualification of COTS parts is presented. The multi-scale approach is divided into two modules. The first module generates information related to bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate response of linear bipolar integrated circuits for different families of components. Simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation hardness assurance flow. The platform may reduce some of the costly reliance on testing for all systems.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Jan 1 2018

Keywords

  • Bipolar transistor
  • Computational modeling
  • COTS
  • Databases
  • Degradation
  • ELDRS
  • Hydrogen
  • Integrated circuit modeling
  • modeling
  • NPN
  • PNP
  • qualification
  • Semiconductor process modeling
  • total ionizing dose
  • Transistors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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