The nanostructure and chemical distribution in semi-insulating polycrystalline oxygen-doped silicon (SIPOS) deposited on (001) Si and its isothermal transformation behavior at 900°C were investigated by high resolution electron microscopy (HREM) and electron energy loss nanospectroscopy (EELS). The structure of the as-deposited film, which contained 15 at.% oxygen, was amorphous. No evidence for nanocrystalline second phases was found. It was similar in appearance to amorphous silicon.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of Materials Research|
|Publication status||Published - Nov 1993|
ASJC Scopus subject areas
- Materials Science(all)