Composition and structure of SIPOS: a high spatial resolution electron microscopy study

M. Catalano, M. J. Kim, Ray Carpenter, K. Das Chowdhury, Joe Wong

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The nanostructure and chemical distribution in semi-insulating polycrystalline oxygen-doped silicon (SIPOS) deposited on (001) Si and its isothermal transformation behavior at 900°C were investigated by high resolution electron microscopy (HREM) and electron energy loss nanospectroscopy (EELS). The structure of the as-deposited film, which contained 15 at.% oxygen, was amorphous. No evidence for nanocrystalline second phases was found. It was similar in appearance to amorphous silicon.

Original languageEnglish (US)
Pages (from-to)2893-2901
Number of pages9
JournalJournal of Materials Research
Issue number11
Publication statusPublished - Nov 1993


ASJC Scopus subject areas

  • Materials Science(all)

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