Charge emission induced transient leakage currents of a-Si: H and IGZO TFTs on flexible plastic substrates

J. Smith, A. Couture, David Allee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The transient off-state thermal emission leakage currents of hydrogenated amorphous silicon (a-Si) and indium gallium zinc oxide (IGZO) metal oxide thin-film transistors (TFTs) fabricated on flexible plastic substrates have been examined for the first time. The transient leakage currents resulting from the detrapping of charge in the TFT active layer were observed to decay in a 1/t power law behaviour from 2 to 100 ms after switching the TFT test structures off. The results demonstrated a uniform density of states for both types of thin-film devices and an ∼1.3× higher transient leakage current for the IGZO TFTs. It was also shown that the observed transient leakage currents result in a shot noise at the input to the data-line charge integration amplifiers that is 20 × larger than predicted by using only the conventional static DC TFT leakage current measurements.

Original languageEnglish (US)
Pages (from-to)105-106
Number of pages2
JournalElectronics Letters
Volume50
Issue number2
DOIs
StatePublished - Jan 16 2014

Fingerprint

Gallium
Thin film transistors
Zinc oxide
Amorphous silicon
Leakage currents
Indium
Oxide films
Plastics
Substrates
Thin film devices
Shot noise
Electric current measurement
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Charge emission induced transient leakage currents of a-Si : H and IGZO TFTs on flexible plastic substrates. / Smith, J.; Couture, A.; Allee, David.

In: Electronics Letters, Vol. 50, No. 2, 16.01.2014, p. 105-106.

Research output: Contribution to journalArticle

@article{48a63944b3874a3b8114129d5452f374,
title = "Charge emission induced transient leakage currents of a-Si: H and IGZO TFTs on flexible plastic substrates",
abstract = "The transient off-state thermal emission leakage currents of hydrogenated amorphous silicon (a-Si) and indium gallium zinc oxide (IGZO) metal oxide thin-film transistors (TFTs) fabricated on flexible plastic substrates have been examined for the first time. The transient leakage currents resulting from the detrapping of charge in the TFT active layer were observed to decay in a 1/t power law behaviour from 2 to 100 ms after switching the TFT test structures off. The results demonstrated a uniform density of states for both types of thin-film devices and an ∼1.3× higher transient leakage current for the IGZO TFTs. It was also shown that the observed transient leakage currents result in a shot noise at the input to the data-line charge integration amplifiers that is 20 × larger than predicted by using only the conventional static DC TFT leakage current measurements.",
author = "J. Smith and A. Couture and David Allee",
year = "2014",
month = "1",
day = "16",
doi = "10.1049/el.2013.3795",
language = "English (US)",
volume = "50",
pages = "105--106",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "2",

}

TY - JOUR

T1 - Charge emission induced transient leakage currents of a-Si

T2 - H and IGZO TFTs on flexible plastic substrates

AU - Smith, J.

AU - Couture, A.

AU - Allee, David

PY - 2014/1/16

Y1 - 2014/1/16

N2 - The transient off-state thermal emission leakage currents of hydrogenated amorphous silicon (a-Si) and indium gallium zinc oxide (IGZO) metal oxide thin-film transistors (TFTs) fabricated on flexible plastic substrates have been examined for the first time. The transient leakage currents resulting from the detrapping of charge in the TFT active layer were observed to decay in a 1/t power law behaviour from 2 to 100 ms after switching the TFT test structures off. The results demonstrated a uniform density of states for both types of thin-film devices and an ∼1.3× higher transient leakage current for the IGZO TFTs. It was also shown that the observed transient leakage currents result in a shot noise at the input to the data-line charge integration amplifiers that is 20 × larger than predicted by using only the conventional static DC TFT leakage current measurements.

AB - The transient off-state thermal emission leakage currents of hydrogenated amorphous silicon (a-Si) and indium gallium zinc oxide (IGZO) metal oxide thin-film transistors (TFTs) fabricated on flexible plastic substrates have been examined for the first time. The transient leakage currents resulting from the detrapping of charge in the TFT active layer were observed to decay in a 1/t power law behaviour from 2 to 100 ms after switching the TFT test structures off. The results demonstrated a uniform density of states for both types of thin-film devices and an ∼1.3× higher transient leakage current for the IGZO TFTs. It was also shown that the observed transient leakage currents result in a shot noise at the input to the data-line charge integration amplifiers that is 20 × larger than predicted by using only the conventional static DC TFT leakage current measurements.

UR - http://www.scopus.com/inward/record.url?scp=84893363954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893363954&partnerID=8YFLogxK

U2 - 10.1049/el.2013.3795

DO - 10.1049/el.2013.3795

M3 - Article

AN - SCOPUS:84893363954

VL - 50

SP - 105

EP - 106

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -