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  • John Kouvetakis

(Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units

Watkins, T., Jiang, L., Xu, C., Chizmeshya, A., Smith, D., Menendez, J. & Kouvetakis, J., Jan 9 2012, In : Applied Physics Letters. 100, 2, 022101.

Research output: Contribution to journalArticle

13 Scopus citations

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

30 Scopus citations
8 Scopus citations

Atomic scale studies of structure and bonding in A1PSi3 alloys grown lattice-matched on Si(001)

Aoki, T., Jiang, L., Chizmeshya, A., Menendez, J., Kouvetakis, J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 524-525 2 p.

Research output: Contribution to journalConference article

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Nov 15 2013, In : ECS Journal of Solid State Science and Technology. 2, 9, p. Q172-Q177

Research output: Contribution to journalArticle

15 Scopus citations

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J. & Menendez, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 3-15 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

1 Scopus citations

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Roucka, R., Beeler, R., Mathews, J., Ryu, M. Y., Kee Yeo, Y., Menendez, J. & Kouvetakis, J., May 15 2011, In : Journal of Applied Physics. 109, 10, 103115.

Research output: Contribution to journalArticle

39 Scopus citations

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journalArticle

10 Scopus citations
30 Scopus citations

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journalArticle

59 Scopus citations
71 Scopus citations

Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

Sims, P., Aoki, T., Favaro, R., Wallace, P., White, A., Xu, C., Menendez, J. & Kouvetakis, J., Apr 28 2015, In : Chemistry of Materials. 27, 8, p. 3030-3039 10 p.

Research output: Contribution to journalArticle

4 Scopus citations

Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 83-93 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Ryu, M. Y., Yeo, Y. K., Ahoujja, M., Harris, T., Beeler, R. & Kouvetakis, J., Sep 24 2012, In : Applied Physics Letters. 101, 13, 131110.

Research output: Contribution to journalArticle

6 Scopus citations
1 Scopus citations

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journalArticle

31 Scopus citations
13 Scopus citations

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

6 Scopus citations

Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes

Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J. & Menendez, J., Feb 7 2011, In : Applied Physics Letters. 98, 6, 061109.

Research output: Contribution to journalArticle

87 Scopus citations

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

19 Scopus citations

Direct gap group IV semiconductors for next generation Si-based IR photonics

Kouvetakis, J., Gallagher, J. & Menendez, J., 2014, Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Roucka, R., Mathews, J., Menendez, J. & Kouvetakis, J., Nov 22 2011, 8th IEEE International Conference on Group IV Photonics, GFP 2011. p. 214-216 3 p. 6053767. (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Direct versus indirect optical recombination in Ge films grown on Si substrates

Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J. & Menendez, J., Nov 11 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 20, 205307.

Research output: Contribution to journalArticle

52 Scopus citations

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
6 Scopus citations

Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J. & Kouvetakis, J., Jan 1 2015, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. Jagadish, C., Wang, Y. L., O'Dwyer, C., Hite, J. K., Ren, F., Jang, S., He, J. H., Douglas, E., Lynch, R. P. & Anderson, T. J. (eds.). 14 ed. Electrochemical Society Inc., p. 157-164 8 p. (ECS Transactions; vol. 69, no. 14).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

3 Scopus citations

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1, p. S123-S128

Research output: Contribution to journalArticle

2 Scopus citations

Electroluminescence from Ge1-ySny diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journalArticle

8 Scopus citations

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journalArticle

39 Scopus citations

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications

Gallagher, J. D., Senaratne, C. L., Xu, C., Wallace, P. M., Menendez, J. & Kouvetakis, J., Jan 1 2015, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. Jagadish, C., Wang, Y. L., O'Dwyer, C., Hite, J. K., Ren, F., Jang, S., He, J. H., Douglas, E., Lynch, R. P. & Anderson, T. J. (eds.). 14 ed. Electrochemical Society Inc., p. 147-156 10 p. (ECS Transactions; vol. 69, no. 14).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxy of light emitting SiGeSn materials using novel precursors

Kouvetakis, J. & Menendez, J., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 143-144 2 p. 6874700. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journalArticle

17 Scopus citations

Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journalArticle

41 Scopus citations
3 Scopus citations

Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journalArticle

17 Scopus citations

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

25 Scopus citations

GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms

Beeler, R. T., Smith, D., Kouvetakis, J. & Menendez, J., Jul 27 2012, In : IEEE Journal of Photovoltaics. 2, 4, p. 434-440 7 p., 6244831.

Research output: Contribution to journalArticle

26 Scopus citations

GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 865-874 10 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys

Beeler, R. T., Menendez, J., Smith, D. & Kouvetakis, J., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 591-599 9 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

Roucka, R., Mathews, J., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., Jan 26 2011, In : IEEE Journal of Quantum Electronics. 47, 2, p. 213-222 10 p., 5689404.

Research output: Contribution to journalArticle

74 Scopus citations

High resolution EELS study of Ge1-ySny and Ge1-x-ySixSny alloys

Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.

Research output: Contribution to journalConference article

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journalArticle

7 Scopus citations

Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journalArticle

1 Scopus citations

Materials physics of GeSn-based semiconductor lasers

Menendez, J., Wallace, P. M., Xu, C., Senaratne, C. L., Gallagher, J. D. & Kouvetakis, J., Jan 1 2019, In : Materials Today: Proceedings. 14, p. 38-42 5 p.

Research output: Contribution to journalConference article

1 Scopus citations

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

3 Scopus citations

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

6 Scopus citations