ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications

J. Fan; X. Liu; J. K. Furdyna; Yong-Hang Zhang

doi:10.1063/1.4753819

ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications

J. Fan, X. Liu, J. K. Furdyna, Yong-Hang Zhang

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7 Scopus citations

Abstract

ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-wave infrared (2-5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb DBRs are simulated using the transmission matrix method, indicating a peak reflectance higher than 99.9% for a DBR of 10 quarter-wavelength (λ/4) pairs. A series of ZnTe/GaSb DBR structures have been successfully grown on GaSb (001) substrates using molecular beam epitaxy. X-ray diffraction results reveal smooth interfaces, uniform thicknesses, and low defect density. The DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.5 μm with a 480-nm wide stopband.

Original language	English (US)
Article number	121909
Journal	Applied Physics Letters
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.4753819
State	Published - Sep 17 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c9666d83503f4cd6bc11053899be65df,

title = "ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications",

abstract = "ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-wave infrared (2-5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb DBRs are simulated using the transmission matrix method, indicating a peak reflectance higher than 99.9% for a DBR of 10 quarter-wavelength (λ/4) pairs. A series of ZnTe/GaSb DBR structures have been successfully grown on GaSb (001) substrates using molecular beam epitaxy. X-ray diffraction results reveal smooth interfaces, uniform thicknesses, and low defect density. The DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.5 μm with a 480-nm wide stopband.",

author = "J. Fan and X. Liu and Furdyna, {J. K.} and Yong-Hang Zhang",

note = "Funding Information: The work at ASU was partially supported by Science Foundation Arizona (Contract No. SRG 0339-08) and AFOSR Grant (FA9550-10-1-0129). ASU and Notre Dame were also jointly supported by an NSF Grant (ECCS-1002072). The authors gratefully acknowledge the use of facilities in the LeRoyEyring Center for Solid State Science at Arizona State University. ",

year = "2012",

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day = "17",

doi = "10.1063/1.4753819",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

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T1 - ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications

AU - Fan, J.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Zhang, Yong-Hang

N1 - Funding Information: The work at ASU was partially supported by Science Foundation Arizona (Contract No. SRG 0339-08) and AFOSR Grant (FA9550-10-1-0129). ASU and Notre Dame were also jointly supported by an NSF Grant (ECCS-1002072). The authors gratefully acknowledge the use of facilities in the LeRoyEyring Center for Solid State Science at Arizona State University.

PY - 2012/9/17

Y1 - 2012/9/17

N2 - ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-wave infrared (2-5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb DBRs are simulated using the transmission matrix method, indicating a peak reflectance higher than 99.9% for a DBR of 10 quarter-wavelength (λ/4) pairs. A series of ZnTe/GaSb DBR structures have been successfully grown on GaSb (001) substrates using molecular beam epitaxy. X-ray diffraction results reveal smooth interfaces, uniform thicknesses, and low defect density. The DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.5 μm with a 480-nm wide stopband.

AB - ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-wave infrared (2-5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb DBRs are simulated using the transmission matrix method, indicating a peak reflectance higher than 99.9% for a DBR of 10 quarter-wavelength (λ/4) pairs. A series of ZnTe/GaSb DBR structures have been successfully grown on GaSb (001) substrates using molecular beam epitaxy. X-ray diffraction results reveal smooth interfaces, uniform thicknesses, and low defect density. The DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.5 μm with a 480-nm wide stopband.

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DO - 10.1063/1.4753819

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121909

ER -

ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications

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