Abstract

ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-wave infrared (2-5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb DBRs are simulated using the transmission matrix method, indicating a peak reflectance higher than 99.9% for a DBR of 10 quarter-wavelength (λ/4) pairs. A series of ZnTe/GaSb DBR structures have been successfully grown on GaSb (001) substrates using molecular beam epitaxy. X-ray diffraction results reveal smooth interfaces, uniform thicknesses, and low defect density. The DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.5 μm with a 480-nm wide stopband.

Original languageEnglish (US)
Article number121909
JournalApplied Physics Letters
Volume101
Issue number12
DOIs
StatePublished - Sep 17 2012

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Bragg reflectors
reflectance
matrix methods
molecular beam epitaxy
defects
diffraction
wavelengths
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications. / Fan, J.; Liu, X.; Furdyna, J. K.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 101, No. 12, 121909, 17.09.2012.

Research output: Contribution to journalArticle

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