ZnO based film bulk acoustic resonator as infrared sensor

Ziyu Wang, Xiaotun Qiu, Shih Jui Chen, Wei Pang, Hao Zhang, Jing Shi, Hongyu Yu

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 μW/mm2 and 2 μW/mm2, respectively, but the LFE FBAR exhibited higher IR sensitivity.

Original languageEnglish (US)
Pages (from-to)6144-6147
Number of pages4
JournalThin Solid Films
Volume519
Issue number18
DOIs
StatePublished - Jul 1 2011

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Keywords

  • Film bulk acoustic resonator
  • Infrared
  • Lateral field excitation
  • Thickness field excitation
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Wang, Z., Qiu, X., Chen, S. J., Pang, W., Zhang, H., Shi, J., & Yu, H. (2011). ZnO based film bulk acoustic resonator as infrared sensor. Thin Solid Films, 519(18), 6144-6147. https://doi.org/10.1016/j.tsf.2011.03.134