ZnO based film bulk acoustic resonator as infrared sensor

Ziyu Wang; Xiaotun Qiu; Shih Jui Chen; Wei Pang; Hao Zhang; Jing Shi; Hongyu Yu

doi:10.1016/j.tsf.2011.03.134

ZnO based film bulk acoustic resonator as infrared sensor

Ziyu Wang, Xiaotun Qiu, Shih Jui Chen, Wei Pang, Hao Zhang, Jing Shi, Hongyu Yu

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 μW/mm² and 2 μW/mm², respectively, but the LFE FBAR exhibited higher IR sensitivity.

Original language	English (US)
Pages (from-to)	6144-6147
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2011.03.134
State	Published - Jul 1 2011

Keywords

Film bulk acoustic resonator
Infrared
Lateral field excitation
Thickness field excitation
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.03.134

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title = "ZnO based film bulk acoustic resonator as infrared sensor",

abstract = "This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 μW/mm2 and 2 μW/mm2, respectively, but the LFE FBAR exhibited higher IR sensitivity.",

keywords = "Film bulk acoustic resonator, Infrared, Lateral field excitation, Thickness field excitation, ZnO",

author = "Ziyu Wang and Xiaotun Qiu and Chen, {Shih Jui} and Wei Pang and Hao Zhang and Jing Shi and Hongyu Yu",

note = "Funding Information: This research was partially funded by NASA Astrobiology Institute (follow the elements) and the Chinese Scholarship Council .",

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T1 - ZnO based film bulk acoustic resonator as infrared sensor

AU - Wang, Ziyu

AU - Qiu, Xiaotun

AU - Chen, Shih Jui

AU - Pang, Wei

AU - Zhang, Hao

AU - Shi, Jing

AU - Yu, Hongyu

N1 - Funding Information: This research was partially funded by NASA Astrobiology Institute (follow the elements) and the Chinese Scholarship Council .

PY - 2011/7/1

Y1 - 2011/7/1

N2 - This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 μW/mm2 and 2 μW/mm2, respectively, but the LFE FBAR exhibited higher IR sensitivity.

AB - This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 μW/mm2 and 2 μW/mm2, respectively, but the LFE FBAR exhibited higher IR sensitivity.

KW - Film bulk acoustic resonator

KW - Infrared

KW - Lateral field excitation

KW - Thickness field excitation

KW - ZnO

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VL - 519

SP - 6144

EP - 6147

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

ZnO based film bulk acoustic resonator as infrared sensor

Abstract

Keywords

ASJC Scopus subject areas

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