Abstract

We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1367-1369
Number of pages3
DOIs
Publication statusPublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Peshek, T. J., Tang, Z., Zhang, L., Singh, R., To, B., Gessert, T. A., ... Van Schilfgaarde, M. (2009). ZnGeAs2 thin films properties: A potentially useful semiconductor for photovoltaic applications. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1367-1369). [5411281] https://doi.org/10.1109/PVSC.2009.5411281