Zn as the protective layer for Cu electrode in wafer-Si solar cells

Xiaofei Han, Bin Zhou, Deren Yang, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zn is proposed as the protective layer for the Cu electrode in wafer-Si solar cells to replace today's Ag front electrode. Zn provides a lower material cost, a lower resistivity and more abundant material reserve than Sn. The thermal stability of the Zn/Cu/Ni stack is examined by annealing it in air and the Zn/Cu/Ni stack is advantageous over the Sn/Cu/Ni stack in thermal stability. This is attributed to the better coverage of electroplated Zn on Cu and the higher melting point of Zn over Sn. The sheet resistance of the Zn/Cu/Ni stack is also lower than the Sn/Cu/Ni stack due to the lower resistivity of Zn. XRD measurements before and after annealing confirms that the increased sheet resistance upon annealing is due to oxidation and alloying of the Cu layer. For solderability, a Sn/Zn/Cu/Ni stack with reduced Sn thickness is demonstrated by sequential electroplating.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2481-2485
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Solar cells
Sheet resistance
Annealing
Electrodes
Thermodynamic stability
Electroplating
Alloying
Melting point
Oxidation
Air
Costs

Keywords

  • copper
  • electroplating
  • metallization
  • silicon solar cell
  • thermal stability
  • tin
  • zinc

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Han, X., Zhou, B., Yang, D., & Tao, M. (2014). Zn as the protective layer for Cu electrode in wafer-Si solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2481-2485). [6925433] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925433

Zn as the protective layer for Cu electrode in wafer-Si solar cells. / Han, Xiaofei; Zhou, Bin; Yang, Deren; Tao, Meng.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2481-2485 6925433.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, X, Zhou, B, Yang, D & Tao, M 2014, Zn as the protective layer for Cu electrode in wafer-Si solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925433, Institute of Electrical and Electronics Engineers Inc., pp. 2481-2485, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925433
Han X, Zhou B, Yang D, Tao M. Zn as the protective layer for Cu electrode in wafer-Si solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2481-2485. 6925433 https://doi.org/10.1109/PVSC.2014.6925433
Han, Xiaofei ; Zhou, Bin ; Yang, Deren ; Tao, Meng. / Zn as the protective layer for Cu electrode in wafer-Si solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2481-2485
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