Abstract
The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.
| Original language | English (US) |
|---|---|
| Title of host publication | Institute of Physics Conference Series |
| Pages | 411-416 |
| Number of pages | 6 |
| Edition | 76 |
| State | Published - 1985 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. / Pennycook, S. J.; Culbertson, Robert; Fogarassy, E.
Institute of Physics Conference Series. 76. ed. 1985. p. 411-416.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.
AU - Pennycook, S. J.
AU - Culbertson, Robert
AU - Fogarassy, E.
PY - 1985
Y1 - 1985
N2 - The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.
AB - The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.
UR - http://www.scopus.com/inward/record.url?scp=0022212181&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022212181&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0022212181
SN - 0854981675
SP - 411
EP - 416
BT - Institute of Physics Conference Series
ER -