The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.
|Original language||English (US)|
|Title of host publication||Institute of Physics Conference Series|
|Number of pages||6|
|State||Published - Dec 1 1985|
|Name||Institute of Physics Conference Series|
ASJC Scopus subject areas
- Physics and Astronomy(all)