Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.

S. J. Pennycook, Robert Culbertson, E. Fogarassy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages411-416
Number of pages6
Edition76
StatePublished - 1985
Externally publishedYes

Fingerprint

Doping (additives)
Semiconductor materials
Imaging techniques
Electrons
Microanalysis
Crystal lattices
Chemical elements
Crystal structure
Impurities

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Pennycook, S. J., Culbertson, R., & Fogarassy, E. (1985). Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. In Institute of Physics Conference Series (76 ed., pp. 411-416)

Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. / Pennycook, S. J.; Culbertson, Robert; Fogarassy, E.

Institute of Physics Conference Series. 76. ed. 1985. p. 411-416.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pennycook, SJ, Culbertson, R & Fogarassy, E 1985, Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. in Institute of Physics Conference Series. 76 edn, pp. 411-416.
Pennycook SJ, Culbertson R, Fogarassy E. Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. In Institute of Physics Conference Series. 76 ed. 1985. p. 411-416
Pennycook, S. J. ; Culbertson, Robert ; Fogarassy, E. / Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS. Institute of Physics Conference Series. 76. ed. 1985. pp. 411-416
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