Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.

S. J. Pennycook; R. J. Culbertson; E. Fogarassy

Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.

S. J. Pennycook, R. J. Culbertson, E. Fogarassy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Pages	411-416
Number of pages	6
Edition	76
State	Published - Dec 1 1985
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	76
ISSN (Print)	0373-0751

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.",

abstract = "The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.",

author = "Pennycook, {S. J.} and Culbertson, {R. J.} and E. Fogarassy",

year = "1985",

month = dec,

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T1 - Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.

AU - Pennycook, S. J.

AU - Culbertson, R. J.

AU - Fogarassy, E.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.

AB - The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.

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M3 - Conference contribution

AN - SCOPUS:0022212181

SN - 0854981675

T3 - Institute of Physics Conference Series

SP - 411

EP - 416

BT - Institute of Physics Conference Series

ER -