Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.

S. J. Pennycook, R. J. Culbertson, E. Fogarassy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The determination of dopant distribution and lattice location are key elements in the microanalysis of semiconductor materials. Here we describe two techniques for this purpose. The first allows the imaging and elemental mapping of heavy dopants in light semiconductors, and the second is a means for determining the substitutional fraction of dopants or impurities in any crystal structure.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages411-416
Number of pages6
Edition76
StatePublished - Dec 1 1985
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number76
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Z-CONTRAST IMAGING AND ELECTRON CHANNELING ANALYSIS OF DOPANTS IN SEMICONDUCTORS.'. Together they form a unique fingerprint.

Cite this