Your mosfet modeling

Yu Cao, Michael Orshansky, Takashi Sato, Dennis Sylvester, Chenning Hu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A customizable and predictive BSIM model was generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.

Original languageEnglish (US)
Pages (from-to)17-23
Number of pages7
JournalIEEE Circuits and Devices Magazine
Volume19
Issue number4
DOIs
StatePublished - Jul 2003
Externally publishedYes

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Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Cao, Y., Orshansky, M., Sato, T., Sylvester, D., & Hu, C. (2003). Your mosfet modeling. IEEE Circuits and Devices Magazine, 19(4), 17-23. https://doi.org/10.1109/MCD.2003.1217613

Your mosfet modeling. / Cao, Yu; Orshansky, Michael; Sato, Takashi; Sylvester, Dennis; Hu, Chenning.

In: IEEE Circuits and Devices Magazine, Vol. 19, No. 4, 07.2003, p. 17-23.

Research output: Contribution to journalArticle

Cao, Y, Orshansky, M, Sato, T, Sylvester, D & Hu, C 2003, 'Your mosfet modeling', IEEE Circuits and Devices Magazine, vol. 19, no. 4, pp. 17-23. https://doi.org/10.1109/MCD.2003.1217613
Cao Y, Orshansky M, Sato T, Sylvester D, Hu C. Your mosfet modeling. IEEE Circuits and Devices Magazine. 2003 Jul;19(4):17-23. https://doi.org/10.1109/MCD.2003.1217613
Cao, Yu ; Orshansky, Michael ; Sato, Takashi ; Sylvester, Dennis ; Hu, Chenning. / Your mosfet modeling. In: IEEE Circuits and Devices Magazine. 2003 ; Vol. 19, No. 4. pp. 17-23.
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