TY - JOUR
T1 - X-ray topography characterization of gallium nitride substrates for power device development
AU - Raghothamachar, Balaji
AU - Liu, Yafei
AU - Peng, Hongyu
AU - Ailihumaer, Tuerxun
AU - Dudley, Michael
AU - Shahedipour-Sandvik, F. Shadi
AU - Jones, Kenneth A.
AU - Armstrong, Andrew
AU - Allerman, Andrew A.
AU - Han, Jung
AU - Fu, Houqiang
AU - Fu, Kai
AU - Zhao, Yuji
N1 - Funding Information:
X-ray topography work supported by ARPA-E through PNDIODES program (Project Director: I. Kizilyalli). Synchrotron x-ray topographs were recorded using the resources of the Advanced Photon Source (Beamline 1-BM), a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under contract no. DE-AC02-06CH11357. Joint Photon Sciences Institute at Stony Brook University provided partial support for travel and subsistence at the Advanced Photon Source. The authors acknowledge Stephen R. Lee from Sandia National Laboratory for useful discussion and comments.
Publisher Copyright:
© 2020 Elsevier B.V.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/8/15
Y1 - 2020/8/15
N2 - Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0.3 mm2 containing threading dislocation densities below 103 cm−2 in between a grid of strain centers with higher threading dislocation densities (>104 cm−2). Basal plane dislocation densities in these areas are as low as 104 cm−2. By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
AB - Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0.3 mm2 containing threading dislocation densities below 103 cm−2 in between a grid of strain centers with higher threading dislocation densities (>104 cm−2). Basal plane dislocation densities in these areas are as low as 104 cm−2. By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
KW - A1. Characterization
KW - A1. Defects
KW - A1. Substrates
KW - A1. X-ray topography
KW - A3. Hydride vapor phase epitaxy
KW - B1. Nitrides
UR - http://www.scopus.com/inward/record.url?scp=85084943773&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85084943773&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2020.125709
DO - 10.1016/j.jcrysgro.2020.125709
M3 - Article
AN - SCOPUS:85084943773
VL - 544
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 125709
ER -