TY - JOUR
T1 - X-ray topography characterization of gallium nitride substrates for power device development
AU - Raghothamachar, Balaji
AU - Liu, Yafei
AU - Peng, Hongyu
AU - Ailihumaer, Tuerxun
AU - Dudley, Michael
AU - Shahedipour-Sandvik, F. Shadi
AU - Jones, Kenneth A.
AU - Armstrong, Andrew
AU - Allerman, Andrew A.
AU - Han, Jung
AU - Fu, Houqiang
AU - Fu, Kai
AU - Zhao, Yuji
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/8/15
Y1 - 2020/8/15
N2 - Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0.3 mm2 containing threading dislocation densities below 103 cm−2 in between a grid of strain centers with higher threading dislocation densities (>104 cm−2). Basal plane dislocation densities in these areas are as low as 104 cm−2. By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
AB - Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0.3 mm2 containing threading dislocation densities below 103 cm−2 in between a grid of strain centers with higher threading dislocation densities (>104 cm−2). Basal plane dislocation densities in these areas are as low as 104 cm−2. By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
KW - A1. Characterization
KW - A1. Defects
KW - A1. Substrates
KW - A1. X-ray topography
KW - A3. Hydride vapor phase epitaxy
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2020.125709
DO - 10.1016/j.jcrysgro.2020.125709
M3 - Article
AN - SCOPUS:85084943773
SN - 0022-0248
VL - 544
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125709
ER -