X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)

F. S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, R. M. Wallace, J. Zhu, G. Larrieu, E. Maldonado, W. P. Kirk, Meng Tao

Research output: Contribution to journalArticle

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Abstract

The chemical and electronic passivation of semiconductors is an important issue for the fabrication of electronic devices. In this work we use angle resolved x-ray photoelectron spectroscopy to study the chemical passivation of silicon (001) surface with selenium at a surface coverage close to 1 monolayer. The interaction of Se with silicon breaks the Si-Si dimers leading to a change in the surface reconstruction from a (2×1) to (1×1) symmetry. The silicon surface covered with a selenium monolayer was exposed to dry oxygen at 300 °C for 80 min. We find that the presence of the Se monolayer does not appreciably reduce the formation of a Si O2 layer.

Original languageEnglish (US)
Article number084901
JournalJournal of Applied Physics
Volume102
Issue number8
DOIs
StatePublished - 2007
Externally publishedYes

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photoelectron spectroscopy
oxidation
selenium
passivity
silicon
x rays
electronics
x ray spectroscopy
dimers
fabrication
symmetry
oxygen
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Aguirre-Tostado, F. S., Layton, D., Herrera-Gomez, A., Wallace, R. M., Zhu, J., Larrieu, G., ... Tao, M. (2007). X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001). Journal of Applied Physics, 102(8), [084901]. https://doi.org/10.1063/1.2794858

X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001). / Aguirre-Tostado, F. S.; Layton, D.; Herrera-Gomez, A.; Wallace, R. M.; Zhu, J.; Larrieu, G.; Maldonado, E.; Kirk, W. P.; Tao, Meng.

In: Journal of Applied Physics, Vol. 102, No. 8, 084901, 2007.

Research output: Contribution to journalArticle

Aguirre-Tostado, FS, Layton, D, Herrera-Gomez, A, Wallace, RM, Zhu, J, Larrieu, G, Maldonado, E, Kirk, WP & Tao, M 2007, 'X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)', Journal of Applied Physics, vol. 102, no. 8, 084901. https://doi.org/10.1063/1.2794858
Aguirre-Tostado FS, Layton D, Herrera-Gomez A, Wallace RM, Zhu J, Larrieu G et al. X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001). Journal of Applied Physics. 2007;102(8). 084901. https://doi.org/10.1063/1.2794858
Aguirre-Tostado, F. S. ; Layton, D. ; Herrera-Gomez, A. ; Wallace, R. M. ; Zhu, J. ; Larrieu, G. ; Maldonado, E. ; Kirk, W. P. ; Tao, Meng. / X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001). In: Journal of Applied Physics. 2007 ; Vol. 102, No. 8.
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