X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)

F. S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, R. M. Wallace, J. Zhu, G. Larrieu, E. Maldonado, W. P. Kirk, M. Tao

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Abstract

The chemical and electronic passivation of semiconductors is an important issue for the fabrication of electronic devices. In this work we use angle resolved x-ray photoelectron spectroscopy to study the chemical passivation of silicon (001) surface with selenium at a surface coverage close to 1 monolayer. The interaction of Se with silicon breaks the Si-Si dimers leading to a change in the surface reconstruction from a (2×1) to (1×1) symmetry. The silicon surface covered with a selenium monolayer was exposed to dry oxygen at 300 °C for 80 min. We find that the presence of the Se monolayer does not appreciably reduce the formation of a Si O2 layer.

Original languageEnglish (US)
Article number084901
JournalJournal of Applied Physics
Volume102
Issue number8
DOIs
StatePublished - Nov 5 2007
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Aguirre-Tostado, F. S., Layton, D., Herrera-Gomez, A., Wallace, R. M., Zhu, J., Larrieu, G., Maldonado, E., Kirk, W. P., & Tao, M. (2007). X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001). Journal of Applied Physics, 102(8), [084901]. https://doi.org/10.1063/1.2794858