Abstract
The chemical and electronic passivation of semiconductors is an important issue for the fabrication of electronic devices. In this work we use angle resolved x-ray photoelectron spectroscopy to study the chemical passivation of silicon (001) surface with selenium at a surface coverage close to 1 monolayer. The interaction of Se with silicon breaks the Si-Si dimers leading to a change in the surface reconstruction from a (2×1) to (1×1) symmetry. The silicon surface covered with a selenium monolayer was exposed to dry oxygen at 300 °C for 80 min. We find that the presence of the Se monolayer does not appreciably reduce the formation of a Si O2 layer.
Original language | English (US) |
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Article number | 084901 |
Journal | Journal of Applied Physics |
Volume | 102 |
Issue number | 8 |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy