X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms

S. W. King, E. P. Carlson, R. J. Therrien, J. A. Christman, Robert Nemanich, R. F. Davis

Research output: Contribution to journalArticle

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Abstract

The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650-750°C) occurs via a Stranski-Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at ≈10-15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800°C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750-900°C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism.

Original languageEnglish (US)
Pages (from-to)5584-5593
Number of pages10
JournalJournal of Applied Physics
Volume86
Issue number10
StatePublished - Nov 15 1999
Externally publishedYes

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photoelectron spectroscopy
x rays
frequency modulation
ammonia
hydrogen
x ray spectroscopy
Auger spectroscopy
electron spectroscopy
molecular beam epitaxy
electron diffraction
desorption
decomposition
nitrogen
kinetics
gases
interactions
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms. Journal of Applied Physics, 86(10), 5584-5593.

X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms. / King, S. W.; Carlson, E. P.; Therrien, R. J.; Christman, J. A.; Nemanich, Robert; Davis, R. F.

In: Journal of Applied Physics, Vol. 86, No. 10, 15.11.1999, p. 5584-5593.

Research output: Contribution to journalArticle

King, SW, Carlson, EP, Therrien, RJ, Christman, JA, Nemanich, R & Davis, RF 1999, 'X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms', Journal of Applied Physics, vol. 86, no. 10, pp. 5584-5593.
King SW, Carlson EP, Therrien RJ, Christman JA, Nemanich R, Davis RF. X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms. Journal of Applied Physics. 1999 Nov 15;86(10):5584-5593.
King, S. W. ; Carlson, E. P. ; Therrien, R. J. ; Christman, J. A. ; Nemanich, Robert ; Davis, R. F. / X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 10. pp. 5584-5593.
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AU - Nemanich, Robert

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AB - The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650-750°C) occurs via a Stranski-Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at ≈10-15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800°C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750-900°C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism.

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