X-ray photoelectron diffraction from (3x3) and (√3x√3)R30° (0001)Si 6H-SiC surfaces

S. W. King, C. Ronning, R. F. Davis, R. S. Busby, Robert Nemanich

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Abstract

High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3 X 3) and (√3 X √3)R30° reconstructed (0001)Si 6H-SiC surfaces. The data were compared to XPD patterns obtained from (7 X 7) Si (111) as well as to models proposed for the (3 X 3) and (√3 X √3)R30° 6H-SiC reconstructions. Forward scattering features similar to those observed from the (7 X 7) Si (111) were also observed from the (√3 X √3)R30° 6H-SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1 X 1) and (7 X 7) Si (111) surfaces, the XPD patterns of (3 X 3) and (√3 X √3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3 X 3) surface. The most significant difference with the Si system is the equivalence of the [1010] and [0110] azimuths in the (3 X 3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations.

Original languageEnglish (US)
Pages (from-to)6042-6048
Number of pages7
JournalJournal of Applied Physics
Volume84
Issue number11
Publication statusPublished - Dec 1 1998
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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