X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

Research output: Contribution to journalArticle

Abstract

A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

Original languageEnglish (US)
Pages (from-to)393-396
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number3-4
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

Fingerprint

atomic layer epitaxy
vapor phase epitaxy
quantum wells
metals
x rays
curve fitting
sapphire
rods
templates
microscopes
reflectance
approximation
scattering
crystals

Keywords

  • Atomic layer epitaxy
  • Metalorganic vapor phase epitaxy
  • X-ray crystal truncation rod scattering
  • X-ray reflectivity

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy. / Ju, Guangxu; Kato, Yoshihiro; Honda, Yoshio; Tabuchi, Masao; Takeda, Yoshikazu; Amano, Hiroshi.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 3-4, 01.01.2014, p. 393-396.

Research output: Contribution to journalArticle

Ju, Guangxu ; Kato, Yoshihiro ; Honda, Yoshio ; Tabuchi, Masao ; Takeda, Yoshikazu ; Amano, Hiroshi. / X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2014 ; Vol. 11, No. 3-4. pp. 393-396.
@article{d6a008fb34294bd7b082eb48eff5718e,
title = "X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy",
abstract = "A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.",
keywords = "Atomic layer epitaxy, Metalorganic vapor phase epitaxy, X-ray crystal truncation rod scattering, X-ray reflectivity",
author = "Guangxu Ju and Yoshihiro Kato and Yoshio Honda and Masao Tabuchi and Yoshikazu Takeda and Hiroshi Amano",
year = "2014",
month = "1",
day = "1",
doi = "10.1002/pssc.201300670",
language = "English (US)",
volume = "11",
pages = "393--396",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "3-4",

}

TY - JOUR

T1 - X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

AU - Ju, Guangxu

AU - Kato, Yoshihiro

AU - Honda, Yoshio

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

AU - Amano, Hiroshi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

AB - A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

KW - Atomic layer epitaxy

KW - Metalorganic vapor phase epitaxy

KW - X-ray crystal truncation rod scattering

KW - X-ray reflectivity

UR - http://www.scopus.com/inward/record.url?scp=84898547993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898547993&partnerID=8YFLogxK

U2 - 10.1002/pssc.201300670

DO - 10.1002/pssc.201300670

M3 - Article

AN - SCOPUS:84898547993

VL - 11

SP - 393

EP - 396

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 3-4

ER -