X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

Research output: Contribution to journalArticle

Abstract

A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

Original languageEnglish (US)
Pages (from-to)393-396
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number3-4
DOIs
StatePublished - Apr 2014

Keywords

  • Atomic layer epitaxy
  • Metalorganic vapor phase epitaxy
  • X-ray crystal truncation rod scattering
  • X-ray reflectivity

ASJC Scopus subject areas

  • Condensed Matter Physics

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