X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

Guangxu Ju; Yoshihiro Kato; Yoshio Honda; Masao Tabuchi; Yoshikazu Takeda; Hiroshi Amano

doi:10.1002/pssc.201300670

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

Abstract

A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

Original language	English (US)
Pages (from-to)	393-396
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300670
State	Published - Apr 2014
Externally published	Yes

Keywords

Atomic layer epitaxy
Metalorganic vapor phase epitaxy
X-ray crystal truncation rod scattering
X-ray reflectivity

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300670

Cite this

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title = "X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy",

abstract = "A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.",

keywords = "Atomic layer epitaxy, Metalorganic vapor phase epitaxy, X-ray crystal truncation rod scattering, X-ray reflectivity",

author = "Guangxu Ju and Yoshihiro Kato and Yoshio Honda and Masao Tabuchi and Yoshikazu Takeda and Hiroshi Amano",

year = "2014",

month = apr,

doi = "10.1002/pssc.201300670",

language = "English (US)",

volume = "11",

pages = "393--396",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

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TY - JOUR

T1 - X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

AU - Ju, Guangxu

AU - Kato, Yoshihiro

AU - Honda, Yoshio

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

AU - Amano, Hiroshi

PY - 2014/4

Y1 - 2014/4

N2 - A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

AB - A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

KW - Atomic layer epitaxy

KW - Metalorganic vapor phase epitaxy

KW - X-ray crystal truncation rod scattering

KW - X-ray reflectivity

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DO - 10.1002/pssc.201300670

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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ER -

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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