X-ray diffraction analysis of the strain of SiGeC/(100)Si alloys

A. E. Bair, Terry Alford, S. Sego, Z. Atzmon, Robert Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Samples of Si 1-x-yGe xC y were analyzed with a triple axis high resolution x-ray diffractometer to produce reciprocal space maps. Films with compositions of approximately Si 0.77Ge 0.20C 0.01, with thicknesses ranging from 120 nm to 750 nm were found to be pseudomorphic with a tetragonal distortion, ε T, near 1%. The tetragonal distortion in pseudomorphic samples with compositions near Si 0.47Ge 0.50C 0.03 with thicknesses ranging from 61 nm to 115 nm was found to be near 2%. The strain increased linearly with Ge concentration even though the Ge:C ratio remained nearly constant. The strain in samples with similar compositions was not a function of thickness. These strain measurements correlated well with results from ion channeling analysis.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages461-466
Number of pages6
Volume399
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Bair, A. E., Alford, T., Sego, S., Atzmon, Z., & Culbertson, R. (1996). X-ray diffraction analysis of the strain of SiGeC/(100)Si alloys. In Materials Research Society Symposium - Proceedings (Vol. 399, pp. 461-466). Materials Research Society.