Abstract
Samples of Si 1-x-yGe xC y were analyzed with a triple axis high resolution x-ray diffractometer to produce reciprocal space maps. Films with compositions of approximately Si 0.77Ge 0.20C 0.01, with thicknesses ranging from 120 nm to 750 nm were found to be pseudomorphic with a tetragonal distortion, ε T, near 1%. The tetragonal distortion in pseudomorphic samples with compositions near Si 0.47Ge 0.50C 0.03 with thicknesses ranging from 61 nm to 115 nm was found to be near 2%. The strain increased linearly with Ge concentration even though the Ge:C ratio remained nearly constant. The strain in samples with similar compositions was not a function of thickness. These strain measurements correlated well with results from ion channeling analysis.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 461-466 |
Number of pages | 6 |
Volume | 399 |
State | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995 |
Other
Other | Proceedings of the 1995 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 11/27/95 → 12/1/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials