TY - JOUR
T1 - X-ray characterization of GaN and related materials at growth temperatures-system design and measurements
AU - Takeda, Yoshikazu
AU - Ninoi, Koji
AU - Ju, Guangxu
AU - Kamiya, Hajime
AU - Mizuno, Tetsuya
AU - Fuchi, Shingo
AU - Tabuchi, Masao
PY - 2011
Y1 - 2011
N2 - To investigate the phenomena that occur at the growth temperatures, an MOVPE (metalorganic vapor phase epitaxy) growth system was installed in the X-ray diffractometer of the laboratory level. The present MOVPE system is capable of growing GaN and related materials that are advanced in the device applications but very little is known, especially experimentally, what is going on at the growth front and in the environment. Since MOVPE growth is conducted at an atmospheric pressure or at a low pressure, very limited tools can be used to probe the growing surface. It is demonstrated that the X-ray diffraction, X-ray CTR (crystal truncation rod) scattering, and X-ray reflectivity can be used even at 1000°C that is a normal growth temperature for GaN and related materials.
AB - To investigate the phenomena that occur at the growth temperatures, an MOVPE (metalorganic vapor phase epitaxy) growth system was installed in the X-ray diffractometer of the laboratory level. The present MOVPE system is capable of growing GaN and related materials that are advanced in the device applications but very little is known, especially experimentally, what is going on at the growth front and in the environment. Since MOVPE growth is conducted at an atmospheric pressure or at a low pressure, very limited tools can be used to probe the growing surface. It is demonstrated that the X-ray diffraction, X-ray CTR (crystal truncation rod) scattering, and X-ray reflectivity can be used even at 1000°C that is a normal growth temperature for GaN and related materials.
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U2 - 10.1088/1757-899X/24/1/012002
DO - 10.1088/1757-899X/24/1/012002
M3 - Conference article
AN - SCOPUS:81355139744
SN - 1757-8981
VL - 24
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012002
T2 - 2010 Summer Workshop on Buried Interface Science with X-Rays and Neutrons
Y2 - 25 July 2010 through 27 July 2010
ER -