X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE

Guangxu Ju, Koji Ninoi, Hajime Kamiya, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticle

6 Scopus citations


The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

Original languageEnglish (US)
Pages (from-to)1143-1146
Number of pages4
JournalJournal of Crystal Growth
Issue number1
StatePublished - Mar 1 2011



  • A1. X-ray crystal truncation rod
  • A2. Growth temperature
  • A3. Metalorganic vapor phase epitaxy
  • B1. InGaN
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ju, G., Ninoi, K., Kamiya, H., Fuchi, S., Tabuchi, M., & Takeda, Y. (2011). X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE. Journal of Crystal Growth, 318(1), 1143-1146. https://doi.org/10.1016/j.jcrysgro.2010.11.051