X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE

Guangxu Ju; Koji Ninoi; Hajime Kamiya; Shingo Fuchi; Masao Tabuchi; Yoshikazu Takeda

doi:10.1016/j.jcrysgro.2010.11.051

X-ray characterization at growth temperatures of In_xGa _1-xN growth by MOVPE

Guangxu Ju, Koji Ninoi, Hajime Kamiya, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The growth of In_xGa_1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N₂ as the carrier gas. X-ray CTR scatterings on In_xGa_1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or In_xGa_1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of In_xGa _1-xN. Single diffraction peaks of In_0.16Ga_0.84N and In_0.38Ga_0.62N films were observed at 830 and 780 °C, respectively.

Original language	English (US)
Pages (from-to)	1143-1146
Number of pages	4
Journal	Journal of Crystal Growth
Volume	318
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.051
State	Published - Mar 1 2011
Externally published	Yes

Keywords

A1. X-ray crystal truncation rod
A2. Growth temperature
A3. Metalorganic vapor phase epitaxy
B1. InGaN
B2. Semiconducting IIIV materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2010.11.051

Cite this

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title = "X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE",

abstract = "The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.",

keywords = "A1. X-ray crystal truncation rod, A2. Growth temperature, A3. Metalorganic vapor phase epitaxy, B1. InGaN, B2. Semiconducting IIIV materials",

author = "Guangxu Ju and Koji Ninoi and Hajime Kamiya and Shingo Fuchi and Masao Tabuchi and Yoshikazu Takeda",

note = "Funding Information: This work was supported in part by the Grant-in Aid for Scientific Research (S) #18106001 from the Japan Society for the Promotion of Science . This work was performed as a part of the Projects 2005G155 , 2006G247 , and 2007G557 accepted by the Photon Factory Program Advisory Committee. ",

year = "2011",

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doi = "10.1016/j.jcrysgro.2010.11.051",

language = "English (US)",

volume = "318",

pages = "1143--1146",

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T1 - X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE

AU - Ju, Guangxu

AU - Ninoi, Koji

AU - Kamiya, Hajime

AU - Fuchi, Shingo

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

N1 - Funding Information: This work was supported in part by the Grant-in Aid for Scientific Research (S) #18106001 from the Japan Society for the Promotion of Science . This work was performed as a part of the Projects 2005G155 , 2006G247 , and 2007G557 accepted by the Photon Factory Program Advisory Committee.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

AB - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

KW - A1. X-ray crystal truncation rod

KW - A2. Growth temperature

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. InGaN

KW - B2. Semiconducting IIIV materials

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