X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE

Guangxu Ju, Koji Ninoi, Hajime Kamiya, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

Original languageEnglish (US)
Pages (from-to)1143-1146
Number of pages4
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
StatePublished - Mar 1 2011
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Growth temperature
X ray scattering
X rays
Cooling
x rays
Aluminum Oxide
Diffractometers
Sapphire
Temperature
temperature
room temperature
Diffraction
Gases
cooling
Substrates
diffractometers
scattering
sapphire
diffraction

Keywords

  • A1. X-ray crystal truncation rod
  • A2. Growth temperature
  • A3. Metalorganic vapor phase epitaxy
  • B1. InGaN
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ju, G., Ninoi, K., Kamiya, H., Fuchi, S., Tabuchi, M., & Takeda, Y. (2011). X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE. Journal of Crystal Growth, 318(1), 1143-1146. https://doi.org/10.1016/j.jcrysgro.2010.11.051

X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE. / Ju, Guangxu; Ninoi, Koji; Kamiya, Hajime; Fuchi, Shingo; Tabuchi, Masao; Takeda, Yoshikazu.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 1143-1146.

Research output: Contribution to journalArticle

Ju, G, Ninoi, K, Kamiya, H, Fuchi, S, Tabuchi, M & Takeda, Y 2011, 'X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE', Journal of Crystal Growth, vol. 318, no. 1, pp. 1143-1146. https://doi.org/10.1016/j.jcrysgro.2010.11.051
Ju, Guangxu ; Ninoi, Koji ; Kamiya, Hajime ; Fuchi, Shingo ; Tabuchi, Masao ; Takeda, Yoshikazu. / X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE. In: Journal of Crystal Growth. 2011 ; Vol. 318, No. 1. pp. 1143-1146.
@article{fbe92311cbec42e59aa3254c8e491b86,
title = "X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE",
abstract = "The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.",
keywords = "A1. X-ray crystal truncation rod, A2. Growth temperature, A3. Metalorganic vapor phase epitaxy, B1. InGaN, B2. Semiconducting IIIV materials",
author = "Guangxu Ju and Koji Ninoi and Hajime Kamiya and Shingo Fuchi and Masao Tabuchi and Yoshikazu Takeda",
year = "2011",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2010.11.051",
language = "English (US)",
volume = "318",
pages = "1143--1146",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE

AU - Ju, Guangxu

AU - Ninoi, Koji

AU - Kamiya, Hajime

AU - Fuchi, Shingo

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

AB - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.

KW - A1. X-ray crystal truncation rod

KW - A2. Growth temperature

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. InGaN

KW - B2. Semiconducting IIIV materials

UR - http://www.scopus.com/inward/record.url?scp=79952735141&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952735141&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.11.051

DO - 10.1016/j.jcrysgro.2010.11.051

M3 - Article

AN - SCOPUS:79952735141

VL - 318

SP - 1143

EP - 1146

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -