X-ray absorption study of the reaction of zirconium thin films on silicon(Lll)

Y. Dao, A. M. Edwards, R. J. Nemanich

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

X-ray absorption measurements of 100A Zr thin films deposited on Si(lll) substrates in UHV have been obtained by using a total electron yield detector. Experiments were performed on Zr/Si thin films in order to obtain structural information and find the optimum annealing temperature to produce uniform ZrSi2 epitaxial thin films on Si(lll) substrates. A quantitative X-ray absorption fine structure analysis indicates that the films annealed above 650°C form ZiSi2 disilicides, which have the orthorhombic-base centered C49 structure.

Original languageEnglish (US)
Pages (from-to)396-398
Number of pages3
JournalJapanese Journal of Applied Physics
Volume32
DOIs
StatePublished - Jan 1993
Externally publishedYes

Keywords

  • Exafs
  • Silicides
  • Thin film
  • Total electron yield
  • Xanes
  • Zrsi2

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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