Abstract
X-ray absorption measurements of 100A Zr thin films deposited on Si(lll) substrates in UHV have been obtained by using a total electron yield detector. Experiments were performed on Zr/Si thin films in order to obtain structural information and find the optimum annealing temperature to produce uniform ZrSi2 epitaxial thin films on Si(lll) substrates. A quantitative X-ray absorption fine structure analysis indicates that the films annealed above 650°C form ZiSi2 disilicides, which have the orthorhombic-base centered C49 structure.
Original language | English (US) |
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Pages (from-to) | 396-398 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 32 |
DOIs | |
State | Published - Jan 1993 |
Externally published | Yes |
Keywords
- Exafs
- Silicides
- Thin film
- Total electron yield
- Xanes
- Zrsi2
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy