The electronic structure of the high-k gate dielectrics, TiO 2, ZrO 2, and HfO 2 was investigated using x-ray absorption spectroscopy and high-resolution electron microscopy (HREM). Intra-atomic and inter-atomic transitions were found to have many type of qualitative and quantitative differences. The optical band gap differences for TiO 2, ZrO 2, and HfO 2 led to the differences between the spectral peak energies of the lowest d*-features in the O K 1 spectra. TM oxides were found to have applications in advanced Si devices in the form of high-k dielectrics, indicated by the conduction band offset energies between Si and the respective dielectrics, and the optical band gaps.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering