X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions

G. Lucovsky, J. G. Hong, C. C. Fulton, Y. Zou, R. J. Nemanich, H. Ade

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

The electronic structure of the high-k gate dielectrics, TiO 2, ZrO 2, and HfO 2 was investigated using x-ray absorption spectroscopy and high-resolution electron microscopy (HREM). Intra-atomic and inter-atomic transitions were found to have many type of qualitative and quantitative differences. The optical band gap differences for TiO 2, ZrO 2, and HfO 2 led to the differences between the spectral peak energies of the lowest d*-features in the O K 1 spectra. TM oxides were found to have applications in advanced Si devices in the form of high-k dielectrics, indicated by the conduction band offset energies between Si and the respective dielectrics, and the optical band gaps.

Original languageEnglish (US)
Pages (from-to)2132-2138
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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