Write disturb analyses on half-selected cells of cross-point RRAM arrays

Haitong Li, Hong Yu Chen, Zhe Chen, Bing Chen, Rui Liu, Gang Qiu, Peng Huang, Feifei Zhang, Zizhen Jiang, Bin Gao, Lifeng Liu, Xiaoyan Liu, Shimeng Yu, H. S Philip Wong, Jinfeng Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

Write disturb on half-selected (HS) cells is investigated through electrical measurements and large-scale array simulations. The experimental results collected from the individual devices under constant stress voltage and consecutive pulse operation are correlated with the HS cells in large-scale arrays based on a physics-based SPICE compact model. The impact of write/read disturb on the HS cells at different locations of the arrays is analyzed. Design guidelines for the optimized array size based on the experimental data and HSPICE simulations are presented: e.g., a 16 kb array can maintain its stored data pattern for 5×106 pulses and will have 164 false bits among half-selected cells after write disturb.

Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933167
DOIs
StatePublished - 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: Jun 1 2014Jun 5 2014

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period6/1/146/5/14

Fingerprint

SPICE
Physics
Electric potential
RRAM

Keywords

  • cross-point
  • failure
  • reliability
  • Resistive random access memory (RRAM)
  • write disturb

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Li, H., Chen, H. Y., Chen, Z., Chen, B., Liu, R., Qiu, G., ... Kang, J. (2014). Write disturb analyses on half-selected cells of cross-point RRAM arrays. In IEEE International Reliability Physics Symposium Proceedings [6861158] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861158

Write disturb analyses on half-selected cells of cross-point RRAM arrays. / Li, Haitong; Chen, Hong Yu; Chen, Zhe; Chen, Bing; Liu, Rui; Qiu, Gang; Huang, Peng; Zhang, Feifei; Jiang, Zizhen; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Yu, Shimeng; Wong, H. S Philip; Kang, Jinfeng.

IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. 6861158.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, H, Chen, HY, Chen, Z, Chen, B, Liu, R, Qiu, G, Huang, P, Zhang, F, Jiang, Z, Gao, B, Liu, L, Liu, X, Yu, S, Wong, HSP & Kang, J 2014, Write disturb analyses on half-selected cells of cross-point RRAM arrays. in IEEE International Reliability Physics Symposium Proceedings., 6861158, Institute of Electrical and Electronics Engineers Inc., 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 6/1/14. https://doi.org/10.1109/IRPS.2014.6861158
Li H, Chen HY, Chen Z, Chen B, Liu R, Qiu G et al. Write disturb analyses on half-selected cells of cross-point RRAM arrays. In IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. 6861158 https://doi.org/10.1109/IRPS.2014.6861158
Li, Haitong ; Chen, Hong Yu ; Chen, Zhe ; Chen, Bing ; Liu, Rui ; Qiu, Gang ; Huang, Peng ; Zhang, Feifei ; Jiang, Zizhen ; Gao, Bin ; Liu, Lifeng ; Liu, Xiaoyan ; Yu, Shimeng ; Wong, H. S Philip ; Kang, Jinfeng. / Write disturb analyses on half-selected cells of cross-point RRAM arrays. IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014.
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